Dislocation scattering in a two-dimensional electron gas

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.Comment: 6 pages, 3 figure

Optical frequency combs from high-order sideband generation

We report on the generation of frequency combs from the recently-discovered phenomenon of high-order sideband generation (HSG). A near-band gap continuous-wave (cw) laser with frequency $f_\text{NIR}$ was transmitted through an epitaxial layer containing GaAs/AlGaAs quantum wells that were driven by quasi-cw in-plane electric fields $F_\text{THz}$ between 4 and 50 kV/cm oscillating at frequencies $f_\text{THz}$ between 240 and 640 GHz. Frequency combs with teeth at $f_\text{sideband}=f_\text{NIR}+nf_\text{THz}$ ($n$ even) were produced, with maximum reported $n>120$, corresponding to a maximum comb span $>80$ THz. Comb spectra with the identical product $f_\text{THz}\times F_\text{THz}$ were found to have similar spans and shapes in most cases, as expected from the picture of HSG as a scattering-limited electron-hole recollision phenomenon. The HSG combs were used to measure the frequency and linewidth of our THz source as a demonstration of potential applications

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots (QDs) is studied. Using minority/majority carrier injection, ballistic electron emission spectroscopy and its related hot-carrier scattering spectroscopy measures barrier heights of a buried AlxGa1-xAs layer in conduction band and valence band respectively, the band gap of Al0.4Ga0.6As is therefore determined as 2.037 +/- 0.009 eV at 9 K. Under forward collector bias, interband electroluminescence is induced by the injection of minority carriers with sub-bandgap kinetic energies. Three emission peaks from InAs QDs, InAs wetting layer, and GaAs are observed in concert with minority carrier injection.Comment: 11 pages, 4 figures, submitted to Physical Review

Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$.Comment: 5 pages, 4 figure

Traveling-Wave Photomixers Based On Noncollinear Optical/Terahertz Phase-Matching

Traveling-wave THz photomixers based on angle-tuned optical/THz phase-matching are experimentally demonstrated. A dc-biased coplanar stripline terminated by a planar antenna is fabricated on low-temperature-grown GaAs. A distributed area between the striplines is illuminated by two noncollinear laser beams which generate interference fringes accompanied by THz waves. The velocity of the optical fringe is matched to the THz-wave velocity in the stripline by tuning the incident angle of the laser beams. The device can handle the laser power over 300 mW and provides the THz output of ~0.1 µW with the 3-dB bandwidth of 2 THz. The experimental results show that traveling-wave photomixers have the potential to surpass conventional small area designs

Design and characterization of optical-THz phase-matched traveling-wave photomixers

Design and characterization of optical-THz phase-matched traveling-wave photomixers for difference-frequency generation of THz waves are presented. A de-biased coplanar stripline fabricated on low-temperature-grown GaAs is illuminated by two non-collinear laser beams which generate moving interference fringes that are accompanied by THz waves. By tuning the offset angle between the two laser beams, the velocity of the interference fringe can be matched to the phase velocity of the THz wave in the coplanar stripline. The generated THz waves are radiated into free space by the antenna at the termination of the stripline. Enhancement of the output power was clearly observed when the phase-matching condition was satisfied. The output power spectrum has a 3-dB bandwidth of 2 THz and rolls off as ~9 dB/Oct which is determined by the frequency dependent attenuation in the stripline, while the bandwidth of conventional photomixer design has the limitation by the RC time constant due to the electrode capacitance. The device can handle the laser power of over 380 mW, which is 5 times higher than the maximum power handring capability of conventional small area devices. The results show that the traveling-wave photomixers have the potential to surpass small area designs, especially at higher frequencies over I THz, owing to their great thermal dissipation capability and capacitance-free wide bandwidth