Electromechanics of charge shuttling in dissipative nanostructures

We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo simulations and by using an analytical approach. We show that electromechanical coupling results in a highly nonlinear IV-curve. For voltages above the Coulomb blockade threshold, two distinct regimes of charge transfer occur: At low voltages the system behave as a static asymmetric double junction and tunneling is the dominating charge transfer mechanism. At higher voltages an abrupt transition to a new shuttle regime appears, where the grain performs an oscillatory motion back and forth between the leads. In this regime the current is mainly mediated by charges that are carried on the grain as it moves from one lead to the other.Comment: 8 pages, 10 figures, final version to be published in PR

On Properties of the Isoscalar Giant Dipole Resonance

Main properties (strength function, energy-dependent transition density, branching ratios for direct nucleon decay) of the isoscalar giant dipole resonance in several medium-heavy mass spherical nuclei are described within a continuum-RPA approach, taking into account the smearing effect. All model parameters used in the calculations are taken from independent data. Calculation results are compared with available experimental data.Comment: 12 pages, 2 figure

Coulomb correlations and coherent charge tunneling in mesoscopic coupled rings

We study the effect of a strong electron-electron (e-e) interaction in a system of two concentric one-dimensional rings with incommensurate areas A_1 and A_2, coupled by a tunnel amplitude. For noninteracting particles the magnetic moment (persistent current) m of the many-body ground state and first excited states is an irregular function of the external magnetic field. In contrast, we show that when strong e-e interactions are present the magnetic field dependence of m becomes periodic. In such a strongly correlated system disorder can only be caused by inter-ring charge fluctuations, controllable by a gate voltage. The oscillation period of m is proportional to 1/(A_1 + A_2) if fluctuations are suppressed. Coherent inter-ring tunneling doubles the period when charge fluctuations are allowed.Comment: 4 pages, 4 eps figure

Incoherent dynamics of vibrating single-molecule transistors

We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single electron transistor (SET). While our calculation starts from the same model of previous work (D. Boese and H. Schoeller, Europhys. Lett. 54, 66(2001)) we obtain quantitatively different dynamics. Calculated I-V curves exhibit most features present in experimental data with a physically reasonable parameter set, and point to a strong dependence of the oscillator's potential on the electrostatics of the island region. We propose that in a regime where the electric field due to the bias voltage itself affects island position, a "catastrophic" negative differential conductance (NDC) may be realized. This effect is directly attributable to the magnitude of overlap of final and initial quantum oscillator states, and as such represents experimental control over quantum transitions of the oscillator via the macroscopically controllable bias voltage.Comment: 6 pages, LaTex, 6 figure

Energy pumping in a quantum nanoelectromechanical system

Fully quantized mechanical motion of a single-level quantum coupled to two voltage biased electronic leads is studied. It is found that there are two different regimes depending on the applied voltage. If the bias voltage is below a certain threshold (which depends on the energy of the vibrational quanta) the mechanical subsystem is characterized by a low level of excitation. Above a threshold the energy accumulated in the mechanical degree of freedom dramatically increases. The distribution function for the energy level population and the current through the system in this regime is calculated

Impact of van der Waals forces on the classical shuttle instability

The effects of including the van der Waals interaction in the modelling of the single electron shuttle have been investigated numerically. It is demonstrated that the relative strength of the vdW-forces and the elastic restoring forces determine the characteristics of the shuttle instability. In the case of weak elastic forces and low voltages the grain is trapped close to one lead, and this trapping can be overcome by Coulomb forces by applying a bias voltage $V$ larger than a threshold voltage $V_{\rm u}$. This allows for grain motion leading to an increase in current by several orders of magnitude above the transition voltage $V_{\rm u}$. Associated with the process is also hysteresis in the I-V characteristics.Comment: minor revisions, updated references, Article published in Phys. Rev. B 69, 035309 (2004