Predicted performance of InP solar cells in Cassegrainian and slats space concentrator arrays at 20 to 100 AM0, 80 to 100 C

Researchers have calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+InP solar cells on incident intensities up 200 AM0 and temperatures up to 100 C (373K). Both circular and rectangular cells have been considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80 to 100 C and the latter for use in a Slats type concentrator array at 20 AM0 80 to 100 C. Calculation of the temperature dependence of the performance parameters I sub sc, V sub oc, FF and eta was done by first verifying that the use of the measured temperature variation of I sub sc, of the best published value of the temperature dependence of the bandgap of InP, and of the temperature dependences of the lifetimes and mobilities of electrons and holes the same as in equivalently doped GaAs, gave calculated results that closely matched measured data on the temperature variation of I sub sc, V sub oc, and FF of four existing InP cells at 1 AM0. It was then assumed that the same temperature dependences of I sub sc, the bandgap and lifetimes and mobilities would hold in the near-optimally designed cells at the higher concentrations

Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data

The high intensity solar cell: Key to low cost photovoltaic power

The design considerations and performance characteristics of the 'high intensity' (HI) solar cell are presented. A high intensity solar system was analyzed to determine its cost effectiveness and to assess the benefits of further improving HI cell efficiency. It is shown that residential sized systems can be produced at less than $1000/kW peak electric power. Due to their superior high intensity performance characteristics compared to the conventional and VMJ cells, HI cells and light concentrators may be the key to low cost photovoltaic power

A possible radiation-resistant solar cell geometry using superlattices

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency

Design considerations for a GaAs nipi doping superlattice solar cell

A new GaAs nipi doping superlattice solar cell structure is presented, which holds promise for high efficiency coupled with very high radiation tolerance. The structure has all contacts on the unilluminated side. Design constraints are presented which this structure must satisfy in order to exhibit high efficiency and high radiation tolerance. The results of self-consistent quantum mechanical calculations are presented which show that a viable design of this cell would include relatively thick n and p layers which are fairly heavily doped

A theoretical comparison of the near-optimum design and predicted performance of n/p and p/n indium phosphide homojunction solar cells

Using a detailed simulation model of p(+)nn(+) and n(+)pp(+) indium phosphide (InP) homojunction solar cells, extensive parametric variation computer simulation runs were performed to aid in making near-optimum designs for these two solar cell configurations. The values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. The results of parametric variation runs are presented for each configuration showing how the performance parameters J(sub sc), V(sub oc), and eta vary with each of the cell design parameters for the near-optimally designed cell. Finally, the theoretically obtained results are discussed, and the relative merits and drawbacks of the two configurations are compared