61 research outputs found
Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots
We present data on the electrical transport properties of highly-doped
silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up
to 48 T. At low field intensities, B<7 T, we observe a strong modification of
the conductance due to the destruction of weak localization whereas at higher
fields, where the magnetic field length becomes comparable to the effective
Bohr radius of phosphorous in silicon, a strong decrease in conductance is
demonstrated. Data in the high and low electric field bias regimes are then
compared to show that close to the Coulomb blockade edge magnetically-induced
quenching to single donors in the quantum dot is achieved at about 40 T.Comment: accepted for publication at Current Applied Physic
Unified linear response theory of quantum dot circuits
Modelling the electrical response of multi-level quantum systems at finite
frequency has been typically performed in the context of two incomplete
paradigms: (i) Input-output theory, which is valid at any frequency but
neglects dynamic losses, and (ii) semiclassical theory, which captures well
dynamic dissipation effects but is only accurate at low frequencies. Here, we
develop a unifying theory, valid for arbitrary frequencies, that captures the
non-unitary effects introduced by finite relaxation and dephasing. The theory
allows a multi-level system to be described by a universal small-signal
equivalent circuit model, a resonant RLC circuit, whose topology only depends
on the number of energy levels, which we apply here to the case of a charge
qubit in a double quantum dot. Our model will facilitate the design of hybrid
quantum-classical circuits and the simulation of qubit control and quantum
state readout
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
We present a novel reconfigurable metal-oxide-semiconductor multi-gate
transistor that can host a quadruple quantum dot in silicon. The device consist
of an industrial quadruple-gate silicon nanowire field-effect transistor.
Exploiting the corner effect, we study the versatility of the structure in the
single quantum dot and the serial double quantum dot regimes and extract the
relevant capacitance parameters. We address the fabrication variability of the
quadruple-gate approach which, paired with improved silicon fabrication
techniques, makes the corner state quantum dot approach a promising candidate
for a scalable quantum information architecture
Thermionic charge transport in CMOS nano-transistors
We report on DC and microwave electrical transport measurements in
silicon-on-insulator CMOS nano-transistors at low and room temperature. At low
source-drain voltage, the DC current and RF response show signs of conductance
quantization. We attribute this to Coulomb blockade resulting from barriers
formed at the spacer-gate interfaces. We show that at high bias transport
occurs thermionically over the highest barrier: Transconductance traces
obtained from microwave scattering-parameter measurements at liquid helium and
room temperature is accurately fitted by a thermionic model. From the fits we
deduce the ratio of gate capacitance and quantum capacitance, as well as the
electron temperature
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