Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak is computed, and its use for devices is discussed. The influence of both rotational alignment of the graphene electrodes and structural perfection of the graphene is discussed.Comment: 23 pages, 9 figures; added Section II(E) and associated figures, and made other minor typographical correction

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors

Effective generation of Ising interaction and cluster states in coupled microcavities

We propose a scheme for realizing the Ising spin-spin interaction and atomic cluster states utilizing trapped atoms in coupled microcavities. It is shown that the atoms can interact with each other via the exchange of virtual photons of the cavities. Through suitably tuning the parameters, an effective Ising spin-spin interaction can be generated in this optical system, which is used to produce the cluster states. This scheme does not need the preparation of initial states of atoms and cavity modes, and is insensitive to cavity decay.Comment: 11pages, 2 figures, Revtex

Non-Abelian Quantum Hall Effect in Topological Flat Bands

Inspired by recent theoretical discovery of robust fractional topological phases without a magnetic field, we search for the non-Abelian quantum Hall effect (NA-QHE) in lattice models with topological flat bands (TFBs). Through extensive numerical studies on the Haldane model with three-body hard-core bosons loaded into a TFB, we find convincing numerical evidence of a stable $\nu=1$ bosonic NA-QHE, with the characteristic three-fold quasi-degeneracy of ground states on a torus, a quantized Chern number, and a robust spectrum gap. Moreover, the spectrum for two-quasihole states also shows a finite energy gap, with the number of states in the lower energy sector satisfying the same counting rule as the Moore-Read Pfaffian state.Comment: 5 pages, 7 figure

Quantum-dot gain without inversion:Effects of dark plasmon-exciton hybridization

We propose an initial-state-dependent quantum-dot gain without population inversion in the vicinity of a resonant metallic nanoparticle. The gain originates from the hybridization of a dark plasmon-exciton and is accompanied by efficient energy transfer from the nanoparticle to the quantum dot. This hybridization of the dark plasmon-exciton, attached to the hybridization of the bright plasmon-exciton, strengthens nonlinear light-quantum emitter interactions at the nanoscale, thus the spectral overlap between the dark and the bright plasmons enhances the gain effect. This hybrid system has potential applications in ultracompact tunable quantum devices.Physics, Condensed MatterSCI(E)[email protected]