Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers

A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices

Investigation of Nitrogen-Vacancy Defectsin Aluminum Nitride films

International audienc

Hybrid MBE-CBE Growth and Characterization of undoped In0,53Ga0,47As on Fe-InP(001) for avalanche photodiodes (APDs)

International audienc

Hybrid MBE-CBE Growth and Characterization of undoped In0,53Ga0,47As on Fe-InP(001) for avalanche photodiodes (APDs)

International audienc