Weak localization in a system with a barrier: Dephasing and weak Coulomb blockade

We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing which persists down to T=0 and yields suppression of WL correction to conductance below its non-interacting value. Our results may account for recent observations of low temperature saturation of the electron decoherence time in quantum dots.Comment: published version, 10 page

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Shot noise and Coulomb effects on non-local electron transport in normal-superconducting-normal heterostructures

We argue that Coulomb interaction can strongly influence non-local electron transport in normal-superconducting-normal structures and emphasize direct relation between Coulomb effects and non-local shot noise. In the tunneling limit non-local differential conductance is found to have an S-like shape and can turn negative at non-zero bias. At high transmissions crossed Andreev reflection yields positive noise cross-correlations and Coulomb anti-blockade of non-local electron transport.Comment: 8 pages, 2 figures. Published versio