Spin Decay in a Quantum Dot Coupled to a Quantum Point Contact

We consider a mechanism of spin decay for an electron spin in a quantum dot due to coupling to a nearby quantum point contact (QPC) with and without an applied bias voltage. The coupling of spin to charge is induced by the spin-orbit interaction in the presence of a magnetic field. We perform a microscopic calculation of the effective Hamiltonian coupling constants to obtain the QPC-induced spin relaxation and decoherence rates in a realistic system. This rate is shown to be proportional to the shot noise of the QPC in the regime of large bias voltage and scales as $a^{-6}$ where $a$ is the distance between the quantum dot and the QPC. We find that, for some specific orientations of the setup with respect to the crystallographic axes, the QPC-induced spin relaxation and decoherence rates vanish, while the charge sensitivity of the QPC is not changed. This result can be used in experiments to minimize QPC-induced spin decay in read-out schemes.Comment: 10 pages, 2 figures, 2 table

Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot

We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime we propose a simple method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Due to a large effective g-factor |g*|=8+/-1 the transition from singlet S to triplet T+ groundstate with increasing magnetic field is dominated by the Zeeman energy rather than by orbital effects. We find that the spin-orbit coupling mixes the T+ and S states and thus induces an avoided crossing with magnitude $\Delta_{SO}$=0.25+/-0.05 meV. This allows us to calculate the spin-orbit length $\lambda_{SO}\approx$127 nm in such systems using a simple model.Comment: 21 pages, 7 figures, including supplementary note

Transport through a double quantum dot in the sequential- and co- tunneling regimes

We study transport through a double quantum dot, both in the sequential tunneling and cotunneling regimes. Using a master equation approach, we find that, in the sequential tunneling regime, the differential conductance $G$ as a function of the bias voltage $\Delta\mu$ has a number of satellite peaks with respect to the main peak of the Coulomb blockade diamond. The position of these peaks is related to the interdot tunnel splitting and the singlet-triplet splitting. We find satellite peaks with both {\em positive} and {\em negative} values of differential conductance for realistic parameter regimes. Relating our theory to a microscopic (Hund-Mulliken) model for the double dot, we find a temperature regime for which the Hubbard ratio (=tunnel coupling over on-site Coulomb repulsion) can be extracted from $G(\Delta\mu)$ in the cotunneling regime. In addition, we consider a combined effect of cotunneling and sequential tunneling, which leads to new peaks (dips) in $G(\Delta\mu)$ inside the Coulomb blockade diamond below some temperature scales, which we specify.Comment: 16 pages, 10 figure

Spin dynamics in InAs-nanowire quantum-dots coupled to a transmission line

We study theoretically electron spins in nanowire quantum dots placed inside a transmission line resonator. Because of the spin-orbit interaction, the spins couple to the electric component of the resonator electromagnetic field and enable coherent manipulation, storage, and read-out of quantum information in an all-electrical fashion. Coupling between distant quantum-dot spins, in one and the same or different nanowires, can be efficiently performed via the resonator mode either in real time or through virtual processes. For the latter case we derive an effective spin-entangling interaction and suggest means to turn it on and off. We consider both transverse and longitudinal types of nanowire quantum-dots and compare their manipulation timescales against the spin relaxation times. For this, we evaluate the rates for spin relaxation induced by the nanowire vibrations (phonons) and show that, as a result of phonon confinement in the nanowire, this rate is a strongly varying function of the spin operation frequency and thus can be drastically reduced compared to lateral quantum dots in GaAs. Our scheme is a step forward to the formation of hybrid structures where qubits of different nature can be integrated in a single device

Dynamic response of 1D bosons in a trap

We calculate the dynamic structure factor S(q,omega) of a one-dimensional (1D) interacting Bose gas confined in a harmonic trap. The effective interaction depends on the strength of the confinement enforcing the 1D motion of atoms; interaction may be further enhanced by superimposing an optical lattice on the trap potential. In the compressible state, we find that the smooth variation of the gas density around the trap center leads to softening of the singular behavior of S(q,omega) at Lieb-1 mode compared to the behavior predicted for homogeneous 1D systems. Nevertheless, the density-averaged response remains a non-analytic function of q and omega at Lieb-1 mode in the limit of weak trap confinement. The exponent of the power-law non-analyticity is modified due to the inhomogeneity in a universal way, and thus, bears unambiguously the information about the (homogeneous) Lieb-Liniger model. A strong optical lattice causes formation of Mott phases. Deep in the Mott regime, we predict a semi-circular peak in S(q,\omega) centered at the on-site repulsion energy, omega=U. Similar peaks of smaller amplitudes exist at multiples of U as well. We explain the suppression of the dynamic response with entering into the Mott regime, observed recently by D. Clement et al., Phys. Rev. Lett. v. 102, p. 155301 (2009), based on an f-sum rule for the Bose-Hubbard model.Comment: 24 pages, 11 figure

Phonon-induced decay of the electron spin in quantum dots

We study spin relaxation and decoherence in a GaAs quantum dot due to spin-orbit interaction. We derive an effective Hamiltonian which couples the electron spin to phonons or any other fluctuation of the dot potential. We show that the spin decoherence time $T_2$ is as large as the spin relaxation time $T_1$, under realistic conditions. For the Dresselhaus and Rashba spin-orbit couplings, we find that, in leading order, the effective magnetic field can have only fluctuations transverse to the applied magnetic field. As a result, $T_2=2T_1$ for arbitrarily large Zeeman splittings, in contrast to the naively expected case $T_2\ll T_1$. We show that the spin decay is drastically suppressed for certain magnetic field directions and values of the Rashba coupling constant. Finally, for the spin coupling to acoustic phonons, we show that $T_2=2T_1$ for all spin-orbit mechanisms in leading order in the electron-phonon interaction.Comment: 5 pages, 1 figur

Modeling Ferro- and Antiferromagnetic Interactions in Metal-Organic Coordination Networks

Magnetization curves of two rectangular metal-organic coordination networks formed by the organic ligand TCNQ (7,7,8,8-tetracyanoquinodimethane) and two different (Mn and Ni) 3d transition metal atoms [M(3d)] show marked differences that are explained using first principles density functional theory and model calculations. We find that the existence of a weakly dispersive hybrid band with M(3d) and TCNQ character crossing the Fermi level is determinant for the appearance of ferromagnetic coupling between metal centers, as it is the case of the metallic system Ni-TCNQ but not of the insulating system Mn-TCNQ. The spin magnetic moment localized at the Ni atoms induces a significant spin polarization in the organic molecule; the corresponding spin density being delocalized along the whole system. The exchange interaction between localized spins at Ni centers and the itinerant spin density is ferromagnetic. Based on two different model Hamiltonians, we estimate the strength of exchange couplings between magnetic atoms for both Ni- and Mn-TCNQ networks that results in weak ferromagnetic and very weak antiferromagnetic correlations for Ni- and Mn-TCNQ networks, respectively.Comment: 27 pages, 6 figures, accepted for publication; Journal of Physical Chemistry C (2014

Spin relaxation at the singlet-triplet crossing in a quantum dot

We study spin relaxation in a two-electron quantum dot in the vicinity of the singlet-triplet crossing. The spin relaxation occurs due to a combined effect of the spin-orbit, Zeeman, and electron-phonon interactions. The singlet-triplet relaxation rates exhibit strong variations as a function of the singlet-triplet splitting. We show that the Coulomb interaction between the electrons has two competing effects on the singlet-triplet spin relaxation. One effect is to enhance the relative strength of spin-orbit coupling in the quantum dot, resulting in larger spin-orbit splittings and thus in a stronger coupling of spin to charge. The other effect is to make the charge density profiles of the singlet and triplet look similar to each other, thus diminishing the ability of charge environments to discriminate between singlet and triplet states. We thus find essentially different channels of singlet-triplet relaxation for the case of strong and weak Coulomb interaction. Finally, for the linear in momentum Dresselhaus and Rashba spin-orbit interactions, we calculate the singlet-triplet relaxation rates to leading order in the spin-orbit interaction, and find that they are proportional to the second power of the Zeeman energy, in agreement with recent experiments on triplet-to-singlet relaxation in quantum dots.Comment: 29 pages, 14 figures, 1 tabl

Electron Spins in Artificial Atoms and Molecules for Quantum Computing

Achieving control over the electron spin in quantum dots (artificial atoms) or real atoms promises access to new technologies in conventional and in quantum information processing. Here we review our proposal for quantum computing with spins of electrons confined to quantum dots. We discuss the basic requirements for implementing spin-qubits, and describe a complete set of quantum gates for single- and two-qubit operations. We show how a quantum dot attached to leads can be used for spin filtering and spin read-out, and as a spin-memory device. Finally, we focus on the experimental characterization of the quantum dot systems, and discuss transport properties of a double-dot and show how Kondo correlations can be used to measure the Heisenberg exchange interaction between the spins of two dots.Comment: 13 pages, 8 figures, Invited Review (Semiconductor Spintronics, Special Issue of SST