Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching

Microplasticity of subsurface layers of diamond-like semiconductors under microindentation

Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs