Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime

Electron-hole coexistence in disordered graphene probed by high-field magneto-transport

We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to graphene up to filling factor $\nu=2$. In the close vicinity of the charge neutrality point, the system breaks up into co-existing puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations are the largest is directly linked to the mean size of the puddles

Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co

We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We suggest that the peculiarities of the magnetization process of this state can be viewed as a signature of intrinsic ferromagnetism in ZnO:Co materials.Comment: 4 pages, 4 figure

Integer Quantum Hall Effect in Trilayer Graphene

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.Comment: 5 pages, 4 figure

Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures

Cyclotron resonance has been observed in steady and pulsed magnetic fields from high conductivity holes in Ge quantum wells. The resonance positions, splittings and linewidths are compared to calculations of the hole Landau levels

Temperature-dependent magnetospectroscopy of HgTe quantum wells

We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells

Tuning the magnetic ground state of a novel tetranuclear Nickel(II) molecular complex by high magnetic fields

Electron spin resonance and magnetization data in magnetic fields up to 55 T of a novel multicenter paramagnetic molecular complex [L_2Ni_4(N_3)(O_2C Ada)_4](Cl O_4) are reported. In this compound, four Ni centers each having a spin S = 1 are coupled in a single molecule via bridging ligands (including a \mu_4-azide) which provide paths for magnetic exchange. Analysis of the frequency and temperature dependence of the ESR signals yields the relevant parameters of the spin Hamiltonian, in particular the single ion anisotropy gap and the g factor, which enables the calculation of the complex energy spectrum of the spin states in a magnetic field. The experimental results give compelling evidence for tuning the ground state of the molecule by magnetic field from a nonmagnetic state at small fields to a magnetic one in strong fields owing to the spin level crossing at a field of ~25 T.Comment: revised version, accepted for publication in Physical Review