Dynamical properties of excitonic quasi-particles in II-VI semiconductors

This work focuses on the dynamics of exciton polaritons and exciton magnetic polarons in II-VI semiconductors. The propagation dynamics of exciton polaritons, formed between photons and the fundamental exciton resonance, are investigated in (Cd,Zn)Te crystal. Due to the polariton dispersion a sub-mm thick crystal can delay the propagation of light on a sub-ns scale, with the delay increasing as the photon energy approaches the energy of the exciton resonance. The Zeeman splitting induced by the application of an external magnetic field gives rise to polarization effects resulting in oscillations of the polarization of transmitted light in the time domain. The polarization effects including linear and circular birefringence are characterized and explained by a detailed model. Exciton polaron formation is studied in a semimagnetic CdMnSe quantum well surround by CdMgSe barriers. Here, unusual slow exciton magnetic polaron formation is observed and successfully attributed to autolocalization, a positive feedback mechanism between polaron formatation and the confinement of the hole of the exciton. This is enabled by the presence of Mn inside the quantum well and its absence in the barrier. This leads to a stronger confinement of the hole to the quantumn well if an external magnetic field is applied or an exciton magnetic polaron is formed. This additional confinement is confirmed using time resolved magneto spectrosopy by a reduction of exciton lifetime with the application of a Faraday magnetic field and a magnetic field induced anisotropy of the exciton g-factor

Magnetic field induced nutation of the exciton-polariton polarization in (Cd,Zn)Te crystals

We study the polarization dynamics of exciton-polaritons propagating in sub-mm thick (Cd,Zn)Te bulk crystals using polarimetric time-of-flight techniques. The application of a magnetic field in Faraday geometry leads to synchronous temporal oscillations of all Stokes parameters of an initially linearly or circularly polarized, spectrally broad optical pulse of 150 fs duration propagating through the crystal. Strong dispersion for photon energies close to the exciton resonance leads to stretching of the optical pulse to a duration of 200$-$300 ps and enhancement of magneto-optical effects such as the Faraday rotation and the non-reciprocal birefringence. The oscillation frequency of the exciton-polariton polarization increases with magnetic field $B$, reaching 10 GHz at $B\sim 5$T. Surprisingly, the relative contributions of Faraday rotation and non-reciprocal birefringence undergo strong changes with photon energy, which is attributed to a non-trivial spectral dependence of Faraday rotation in the vicinity of the exciton resonance. This leads to polarization nutation of the transmitted optical pulse in the time domain. The results are well explained by a model that accounts for Faraday rotation and magneto-spatial dispersion in zinc-blende crystals. We evaluate the exciton $g$-factor $|g_{\rm exc}|=0.2$ and the magneto-spatial constant $V= 5 \times 10^{-12}$ eVcm$\textup{T}^{-1}$.Comment: 11 pages, 6 figure

Light-emitting GaAs nanowires on a flexible substrate

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core–shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices

Light-Emitting GaAs Nanowires on a Flexible Substrate

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core–shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices

Reduced Charge Transfer Exciton Recombination in Organic Semiconductor Heterojunctions by Molecular Doping

We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer–fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and results in a favored formation of separated carriers. This is observed by the ultrafast quenching of photoluminescence from charge transfer excitons and the increase in photoinduced polaron density by ∼70%. The results are consistent with a reduced formation of emissive charge transfer excitons, induced by state filling of tail states

Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe₂/WSe₂ Heterobilayers with Transfer-Induced Layer Corrugation

The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering