2 research outputs found
A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)
Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100)
substrates by magnetron sputtering. The intensity ratio of the (200) and (400)
diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value
(3.03). The electronic structure of NiYBi was calculated using WIEN2k and a
narrow indirect band gap of width 210 meV was found. The valence band spectra
of the films obtained by linear dichroism in hard X-ray photoelectron
spectroscopy exhibit clear structures that are in good agreement with the
calculated band structure of NiYBi
Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZrHfSn thin films by hard x-ray photoelectron spectroscopy
The electronic band structure of thin films and superlattices made of Heusler
compounds with NiTiSn and NiZrHfSn composition was studied by
means of polarization dependent hard x-ray photoelectron spectroscopy. The
linear dichroism allowed to distinguish the symmetry of the valence states of
the different types of layered structures. The films exhibit a larger amount of
{\it "in-gap"} states compared to bulk samples. It is shown that the films and
superlattices grown with NiTiSn as starting layer exhibit an electronic
structure close to bulk materials