Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. The first paper (part I) focuses on in situ nanoindentation within a scanning electron microscope (SEM) and on fractographic observations of cleaved cross-sections of indented regions to investigate the crack field under various indenter geometries. In the second parent paper (part II), cathodoluminescence and transmission electron microscopy are used to investigate the relationship between dislocation and crack fields. The combination of instrumented in situ scanning electron microscopy nanoindentations and cleavage cross-sectioning allows us to establish a detailed map of cracking in the indented region and cracking kinetics for conical and wedge indenter shapes. For wedge nanoindentations, the evolution of the half-penny crack size with the indentation load is interpreted using a simple linear elastic fracture model based on weight functions. Fracture toughness estimates obtained by this technique fall within the range of usual values quoted for GaA

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ nanoindentation inside a scanning electron microscope (SEM) and of cleavage cross-sectioning techniques. In the present paper (part II), we investigate the early stage of crack nucleation under wedge nanoindentation through cathodoluminescence and transmission electron microscopy. We find that the apex angle of the wedge indenter influences the dislocation microstructure and, as a consequence, the mechanism of crack nucleation under nanoindentation. The formation of microtwins depends on both the orientation of the indenter with respect to the orientation of the GaAs crystal and on the apex angle of the indenter. For dicing applications of GaAs wafers, it is desirable to have an opening angle of the indenter smaller than 70° to facilitate the formation of precursor crack