3,143 research outputs found
Quasielastic Charged-Current Neutrino-Nucleus Scattering with Nonrelativistic Nuclear Energy Density Functionals
Charged-current neutrino-nucleus scattering is studied in the quasielastic
region with the KIDS (Korea-IBS-Daegu-SKKU) nuclear energy density functional.
We focus on the uncertainties stemming from the axial mass and the in-medium
effective mass of the nucleon. Comparing the result of theory to the
state-of-the-art data from MiniBooNE, T2K, and MINERA, we constrain the
axial mass and the effective mass that are compatible with the data. We find
that the total cross section is insensitive to the effective mass, so the axial
mass could be determined independently of the uncertainty in the effective
mass. Differential cross sections at different kinematics are, on the other
hand, sensitive to the effective mass as well as the axial mass. Within the
uncertainty of the axial mass constrained from the total cross section,
dependence on the effective mass is examined. As a result we obtain the axial
mass and the effective mass that are consistent with the experimental data.Comment: 13 pages, 6 figure
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Magnetotransport in low dimensional semiconductor structures
This dissertation describes low-temperature electronic transport measurements on semiconductor structures of restricted dimensionality. The experiments fall into two sets. The first concerns anisotropic magnetotransport measurements and electron focusing in a varying external magnetic field. These are performed using MBE-grown high mobility two-dimensional electron gases formed on (311)B GaAs substrates. The second is a study of magnetic field induced insulator-quantum Hall liquid transitions performed on GaAs-AIGaAs heterostructures in which a number of InAs monolayers are inserted in the centre of a GaAs quantum well. The sample structures were characterised by STM, TEM, STEM, and AFM. Interest in electron transport on high-index GaAs surfaces is increasing, especially since the advent of patterned substrate regrowth. An anisotropic mobility in orthogonal directions seems to be universal for electron gases grown on (311)B-oriented GaAs substrates. The anisotropy depends on the two-dimensional electron gas carrier density, but mobilities are always higher in the [233] direction. The interface roughness scattering is a possible cause of the mobility anisotropy. The electron focusing results demonstrate that the effective mass and Fermi surface are isotropic even through the mobility is anisotropic. An explanation is proposed based on interface roughness scattering. In the second part, a magnetically induced direct transition from an insulating state at zero magnetic field to quantum Hall effect states with Hall resistance Pxy = h/2e2 and Pxy = h/e2 and back to an insulating state at higher field is observed. The phase boundaries are plotted as a function of disorder and magnetic field using two methods, firstly the temperature independent Pxx points and secondly the maxima in CJxx. This experimental phase diagram is related to the disorder induced collapse of spin splitting in the lowest Landau level obtained from activation energy studies.The financial assistance for this work was partially provided by Clare College (the Arkinson fund and the Skillman fund) and the Semiconductor Physics group
Neutron skin of Al with Skyrme and Korea-IBS-Daegu-SKKU density functionals
Recent measurement of the parity-violating (PV) asymmetry in the elastic
electron scattering on Al target evokes the interest in the distribution
of the neutron in the nucleus. In this work, we calculate the neutron skin
thickness () of Al with nonrelativistic nuclear structure
models. We focus on the role of the effective mass, symmetry energy and pairing
force. Models are selected to have effective masses in the range
where is the nucleon mass in free space, and stiffness of the symmetry
energy is varied by choosing the slope of the symmetry energy in the range 9.4
-- 100.5 MeV. Effect of pairing force is investigated by calculating
with and without pairing, and using two different forms of the pairing force.
With nine models, we obtain fm. The result is
independent of the effective mass, symmetry energy, and the form of pairing
force. However, is negative when the pairing force is switched off, so
the pairing force plays an essential role to make positive and
constrained in a narrow range. We also calculate the PV asymmetry () in the elastic electron-Al scattering in the Born approximation at
the kinematics of the Qweak experiment. We obtain a very narrow-ranged result
(2.07 -- 2.09) . The result is consistent with
the experiment and insensitive to the effective mass, symmetry energy and
pairing force.Comment: 5 pages, 2 figure
Biomarkers of Oxidative Stress and Endogenous Antioxidants for Patients with Chronic Subjective Dizziness
As a neurotologic disorder of persistent non-vertiginous dizziness, chronic subjective dizziness (CSD) arises unsteadily by psychological and physiological imbalance. The CSD is hypersensitivity reaction due to exposure to complex motions visual stimuli. However, the pathophysiological features and mechanism of the CSD still remains unclearly. The present study was purposed to establish possible endogenous contributors of the CSD using serum samples from patients with the CSD. A total 199 participants were gathered and divided into two groups; healthy (nβ=β152, male for 61, and female for 91) and CSD (nβ=β47, male for 5, female for 42), respectively. Oxidative stress parameters such as, hydrogen peroxide and reactive substances were significantly elevated (pβ<β0.01 or pβ<β0.001), whereas endogenous antioxidant components including total glutathione contents, and activities of catalase and superoxide dismutase were significantly deteriorated in the CSD group (pβ<β0.01 or pβ<β0.001) as comparing to the healthy group, respectively. Serum levels of tumor necrosis factor -Ξ± and interferon-Ξ³ were significantly increased in the CSD participants (pβ<β0.001). Additionally, emotional stress related hormones including cortisol, adrenaline, and serotonin were abnormally observed in the serum levels of the CSD group (pβ<β0.01 or pβ<β0.001). Our results confirmed that oxidative stress and antioxidants are a critical contributor of pathophysiology of the CSD, and that is first explored to establish features of redox system in the CSD subjects compared to a healthy population
Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K
We report the growth of potassium-doped BaFe2As2 thin films, where the major
charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using
an ex-situ pulsed laser deposition technique. The measured Tc's are 40 and 39 K
for the films grown on Al2O3 and LaAlO3, respectively and diamagnetism
indicates that the films have good bulk superconducting properties below 36 and
30 K, respectively. The X-ray diffraction patterns for both films indicated a
preferred c-axis orientation, regardless of the substrate structures of LaAlO3
and Al2O3. The upper critical field at zero temperature was estimated to be
about 155 T.Comment: 6 pages including 3 figure
Graphene-based Josephson junction single photon detector
We propose to use graphene-based Josephson junctions (gJjs) to detect single
photons in a wide electromagnetic spectrum from visible to radio frequencies.
Our approach takes advantage of the exceptionally low electronic heat capacity
of monolayer graphene and its constricted thermal conductance to its phonon
degrees of freedom. Such a system could provide high sensitivity photon
detection required for research areas including quantum information processing
and radio-astronomy. As an example, we present our device concepts for gJj
single photon detectors in both the microwave and infrared regimes. The dark
count rate and intrinsic quantum efficiency are computed based on parameters
from a measured gJj, demonstrating feasibility within existing technologies.Comment: 11 pages, 6 figures, and 1 table in the main tex
Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams
Rapid thermal annealing of VO2 nanobeams in an ambient argon environment has been carried out at various temperatures after device fabrication. Our analysis revealed that increasing the annealing temperature from 200??C to 400??C results in the reduction of both ohmic and nanobeam resistances with an appreciable decrease in joule-heating based transition voltage and transition temperature, while samples annealed at 500??C exhibited a conducting rutile-phase like characteristics at room temperature. In addition, these variation trends were explored using a physical model and the results were found to be in agreement with the observed results, thus verifying the model.open2
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