Monolithic whispering-gallery mode resonators with vertically coupled integrated bus waveguides

We report on the realization and optical characterization of a CMOS-compatible silicon-based microresonator/waveguide coupled system, fully integrated on a silicon chip. The device uses a vertical coupling scheme between the resonator and a buried strip waveguide. We demonstrate that its high optical quality follows from the accurate planarization of the waveguide topography. More importantly, we demonstrate a wafer-scale mass fabrication of freestanding planar resonators suspended in air and coupled to the integrated bus waveguides. A nanometer control of the coupling distances allows for a precise and selective excitation of different mode families of the resonator. This opens the door for the realization of stable all-integrated complex resonator systems for optomechanical and metrological applications, with the potential to substitute the nowadays intensive use of complicated fiber-taper coupling schemes.Comment: 3 pages, 3 figure

Photon energy lifter

We propose a time-dependent photonic structure, in which the carrier frequency of an optical pulse is shifted without changing its shape. The efficiency of the device takes advantage of slow group velocities of light attainable in periodic photonic structures. The frequency shifting effect is quantitatively studied by means of Finite Difference Time Domain simulations for realistic systems with optical parameters of conventional silicon technology.Comment: 4 pages 5 figure

Formation of optimal-order necklace modes in one-dimensional random photonic superlattices

We study the appearance of resonantly coupled optical modes, optical necklaces, in Anderson localized one-dimensional random superlattices through numerical calculations of the accumulated phase. The evolution of the optimal necklace order m* shows a gradual shift towards higher orders with increasing the sample size. We derive an empirical formula that predicts m* and discuss the situation when in a sample length L the number of degenerate in energy resonances exceeds the optimal one. We show how the \emph{extra} resonances are pushed out to the miniband edges of the necklace, thus reducing the order of the latter by multiples of two.Comment: 4 pages, 4 figure

Permanent mitigation of loss in ultrathin SOI high-Q resonators using UV light

In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us previously for a silicon nitride (Si$_3$N$_4$) platform [Stefan \textit{et. al.}, OL 40, 3316 (2015)]. Unexpectedly, the freshly fabricated Si devices showed large losses of 5 dB/cm, originating from absorption by free carriers, accumulated under the positively charged Si$_3$N$_4$ loading layer. We use 254 nm ultraviolet (UV) light exposures to neutralize progressively and permanently silicon nitride's bulk charge associated with diamagnetic K+defects. This in turn leads to a net decrease of electron concentration in the SOI layer, reducing thus the propagation loss down to 0.9 dB/cm. Detailed MOS-capacitance measurements on test samples were performed to monitor the UV-induced modification of the electronic properties of the system. The evolution of loss mitigation was directly monitored both by Beer-Lambert approach in waveguide transmission experiments, as well as through more accurate cavity linewidth measurements. In the last case, we demonstrate how intrinsic cavity $Q$'s boost from 60,0000 to up to 500,000 after UV treatment. Our results may open routes towards engineering of new functionalities in photonic devices employing UV-modification of space charges and associated local electric fields, unveil the origin of induced optical nonlinearities in Si$_3$N$_4$/Si micro-photonic systems, as well as envisage possible integration of these with ultra-thin SOI electronics.Comment: 8 pages, 5 figure

Role of edge inclination in optical microdisk resonator for label-free sensing

In this paper we report on the measurement and modelling of enhanced optical refractometric sensors based on whispering-gallery-modes. The devices under test are optical microresonators made of silicon nitride on silicon oxide. In our approach, these microresonators are vertically coupled to a buried waveguide with the aim of creating integrated and cost-effective devices. The optimization analysis is a delicate balance of resonance quality factor and evanescent field overlap with the sorrounding environment to analyze. By numerical simulations we show that the microdisk thickness is critical to yield high figure of merit for the sensor, while edge inclination is less important. We also show that figures of merit as high as 1600/RIU are feasible.Comment: 10 page

A fully integrated high-Q Whispering-Gallery Wedge Resonator

Microresonator devices which posses ultra-high quality factors are essential for fundamental investigations and applications. Microsphere and microtoroid resonators support remarkably high Q's at optical frequencies, while planarity constrains preclude their integration into functional lightwave circuits. Conventional semiconductor processing can also be used to realize ultra-high-Q's with planar wedge-resonators. Still, their full integration with side-coupled dielectric waveguides remains an issue. Here we show the full monolithic integration of a wedge-resonator/waveguide vertically-coupled system on a silicon chip. In this approach the cavity and the waveguide lay in different planes. This permits to realize the shallow-angle wedge while the waveguide remains intact, allowing therefore to engineer a coupling of arbitrary strength between these two. The precise size-control and the robustness against post-processing operation due to its monolithic integration makes this system a prominent platform for industrial-scale integration of ultra-high-Q devices into planar lightwave chips.Comment: 6 pages, 4 figure

Optical pulse propagation in a switched-on photonic lattice: Rabi effect with the roles of light and matter interchanged

A light pulse propagating in a suddenly switched on photonic lattice, when the central frequency lies in the photonic band gap, is an analog of the Rabi model where the two-level system is the two resonant (i.e. Bragg-coupled) Fourier modes of the pulse, while the photonic lattice serves as a monochromatic external field. A simple theory of these Rabi oscillations is given and confirmed by the numerical solution of the corresponding Maxwell equations. This is a direct, i.e. temporal, analog of the Rabi effect, additionally to the spatial analog in optical beam propagation described in Opt. Lett. 32, 1920 (2007). An additional high-frequency modulation of the Rabi oscillations reflects the lattice-induced energy transfer between the electric and magnetic fields of the pulse.Comment: 3 pages, 5 figure

High frequency electro-optic measurement of strained silicon racetrack resonators

The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $\chi^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8\,pm/V$ to the induced high-speed $\chi^{(2)}_{eff,zzz}$ tensor element at an applied stress of $-0.5\,GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements