A comparative study on experimental and simulation responses of CR-39 to neutron spectra from a 252Cf source

A simulation of the interaction of neutrons emitted from a 252Cf source with a CR-39 detector is presented in this paper. Elastic and inelastic neutron interactions occur with the constituent materials of the CR-39 detector. Inelastic scatterings only consider (n, a) and (n, p) reactions. Fast neutrons tracks are, mainly, produced by recoil particle tracks in the plastic nuclear track detector as a result of the elastic scattering reaction of neutrons with the constituent materials of the solid-state nuclear track detectors, especially hydrogen nuclei. The energy of the neutron, incident position, direction, and type of interaction were sampled by the Monte Carlo method. The energy threshold, critical angle and scattering angle to the detector surface normal were the most important factors considered in our calculations. The energy deposited per neutron mass unit was calculated. The angular response was determined by both Monte Carlo simulation and experimental results. The number of visible proton tracks and energy deposited per neutron per visible track were calculated and simulated. The threshold energy of the recoil proton as a function of the thickness and incident proton angles was measured by the etchable range of protons at scattering angles, along with the shape and diameter of the track. Experimental and simulations result were in good agreement

Response to Comment on (Novel two-dimensional porous graphitic carbon nitride C6N7 monolayer: A First-principle calculations [Appl. Phys. Lett. 2021, 119, 142102])

Recently, reported a comments on the our paper [Appl. Phys. Lett. 119, 142102 (2021)]. With our response, the APL journal rejected their non scientific comments. There are some ambiguities about their claim: 1-They can check the phonon dispersion of their structure to see ZA out-of-plane mode. 2-They report the uniaxial stress-strain responses in Fig 2., which is unrelated to our paper. For a more helpful understanding of the mechanical properties of the novel C6N7 monolayer, they can publish a paper. 3-They mentioned: Using the DFT method and with assuming a thickness of 3.35 A for the C6N7 monolayer based on graphene thickness. Why did they choose this thickness while we know our C6N7 monolayer is at without buckling? The distance of ZA out-of-plane movement of ions in C6N7 is different from Graphene.Comment: 1 pag

A Novel Method Describing the Space Charge Limited Region in a Planar Diode

A novel and rather simple method is presented to describe the physics of space-charge region in a planar diode. The method deals with the issue in the time domain and as a consequence transient time behavior can be achieved. Potential distributions and currents obtained using this technique, supposing zero initial velocity for electrons, reveal absolute agreement with Child's results. Moreover, applying the method for non-zero uniform initial velocity for electrons, gives results which are in good agreement with previous work

Control of C3N4 and C4N3 carbon nitride nanosheets' electronic and magnetic properties through embedded atoms

In the present work, the effect of various embedded atom impurities on tuning electronic and magnetic properties of C3N4 and C4N3 nanosheets have been studied using first-principles calculations. Our calculations show that C3N4 is a semiconductor and it exhibits extraordinary electronic properties such as dilute-magnetic semiconductor (with H, F, Cl, Be, V, Fe and Co); metal (with N, P, Mg and Ca), half-metal (with Li, Na, K, Al, Sc, Cr, Mn, and Cu) and semiconductor (with O, S, B, C, Si, Ti, Ni and Zn) with the band gaps in the range of 0.3-2.0 eV depending on the species of embedded atom. The calculated electronic properties reveal that C4N3 is a half-metal and it retains half-metallic character with embedded H, O, S, F, B, N, P, Be, Mg, Al, Sc, V, Fe, Ni and Zn atoms. The substitution of Cl, C, Cr and Mn atoms create ferromagnetic-metal character in the C4N3 nanosheet, embedded Co and Cu atoms exhibit a dilute-magnetic semiconductor nature, and embedded Ti atoms result in the system becoming a semiconductor. Therefore, our results reveal the fact that the band gap and magnetism can be modified or induced by various atom impurities, thus, offering effective possibilities to tune the electronic and magnetic properties of C3N4 and C4N3 nanosheets.National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2017R1A2B2011989]; Kirklareli University-BAP [189]; TUBITAK ULAKBIM, High Performance and Grid Computing CenterTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)This work has supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2017R1A2B2011989). B. Akgenc acknowledges financial support the Kirklareli University-BAP under the Project No 189 and TUBITAK ULAKBIM, High Performance and Grid Computing Center.WOS:0005107294000422-s2.0-85078590858PubMed: 3191656

First-principles investigation of electronic, mechanical and thermoelectric properties of graphene-like XBi (X = Si, Ge, Sn) monolayers

Research progress on single layer group III monochalcogenides has been increasing rapidly owing to their interesting physics. Herein, we investigate the dynamically stable single layer forms of XBi (X = Ge, Si or Sn) using density functional theory calculations. Phonon band dispersion calculations and ab initio molecular dynamics simulations reveal the dynamical and thermal stability of the considered monolayers. Raman spectra calculations indicate the existence of 5 Raman active phonon modes, 3 of which are prominent and can be observed in possible Raman measurements. The electronic band structures of the XBi single layers were investigated with and without the effects of spin-orbit coupling (SOC). Our results show that XBi single layers show semiconducting properties with narrow band gap values without SOC. However, only single layer SiBi is an indirect band gap semiconductor, while GeBi and SnBi exhibit metallic behaviors when adding spin-orbit coupling effects. In addition, the calculated linear elastic parameters indicate the soft nature of the predicted monolayers. Moreover, our predictions for the thermoelectric properties of single layer XBi reveal that SiBi is a good thermoelectric material with increasing temperature. Overall, it is proposed that single layer XBi structures can be alternative, stable 2D single layers with varying electronic and thermoelectric properties.National Research Foundation of Korea (NRF) - Korean government (MSIT) [NRF-2015M2B2A4033123]; Flemish Science Foundation (FWO-Vl)FWOThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2015M2B2A4033123). Computational resources were provided by the Flemish Supercomputer Center (VSC). M. Y. is supported by the Flemish Science Foundation (FWO-Vl) by a postdoctoral fellowship.WOS:0006538511000012-s2.0-85107571360PubMed: 3403703