23 research outputs found
Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
InAs/GaSb core–shell nanowires grown on Si substrates by metal–organic chemical vapor deposition
Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration
InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices
International audienceMajorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and hightunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP.We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. Theheight and the width of the GaxIn1-xSbtunnel barrier areextracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimentalI-V trace