Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only slightly. The rate of the quasi-threshold Auger process depends on temperature exponentially. However, its threshold energy essentially varies with quantum well width and is close to zero for narrow quantum wells. It is shown that the thresholdless and the quasi-threshold Auger processes dominate in narrow quantum wells, while the threshold and the quasi-threshold processes prevail in wide quantum wells. The limiting case of a three-dimensional (3D)Auger process is reached for infinitely wide quantum wells. The critical quantum well width is found at which the quasi-threshold and threshold Auger processes merge into a single 3D Auger process. Also studied is phonon-assisted Auger recombination in quantum wells. It is shown that for narrow quantum wells the act of phonon emission becomes resonant, which in turn increases substantially the coefficient of phonon-assisted Auger recombination. Conditions are found under which the direct Auger process dominates over the phonon-assisted Auger recombination at various temperatures and quantum well widths.Comment: 38 pages, 7 figure

EMITTING AND NON-EMITTING JUNCTIONS OF CHARGE CARRIERS IN SEMICONDUCTOR HETEROSTRUCTURES

The new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum structures has been supposed firstly. It has been shown firstly that the rate of the new process is the power temperature function. The analytical expressions obtained for the Auger-recombination rate as an function of the quantum hole parameters enable to optimize the laser structure for a purpose of decreasing threshold current and increasing quantum outputAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Arginine-Containing Tripeptides as Analgesic Substances: The Possible Mechanism of Ligand-Receptor Binding to the Slow Sodium Channel

Two short arginine-containing tripeptides, H-Arg-Arg-Arg-OH (TP1) and Ac-Arg-Arg-Arg-NH2 (TP2), have been shown by the patch-clamp method to modulate the NaV1.8 channels of DRG primary sensory neurons, which are responsible for the generation of nociceptive signals. Conformational analysis of the tripeptides indicates that the key role in the ligand-receptor binding of TP1 and TP2 to the NaV1.8 channel is played by two positively charged guanidinium groups of the arginine side chains located at the characteristic distance of ~9 Å from each other. The tripeptide effect on the NaV1.8 channel activation gating device has been retained when the N- and C-terminal groups of TP1 were structurally modified to TP2 to protect the attacking peptide from proteolytic cleavage by exopeptidases during its delivery to the molecular target, the NaV1.8 channel. As demonstrated by the organotypic tissue culture method, the agents do not affect the DRG neurite growth, which makes it possible to expect the absence of adverse side effects at the tissue level upon administration of TP1 and TP2. The data obtained indicate that both tripeptides can have great therapeutic potential as novel analgesic medicinal substances

Role of the Guanidinium Groups in Ligand–Receptor Binding of Arginine-Containing Short Peptides to the Slow Sodium Channel: Quantitative Approach to Drug Design of Peptide Analgesics

Several arginine-containing short peptides have been shown by the patch-clamp method to effectively modulate the NaV1.8 channel activation gating system, which makes them promising candidates for the role of a novel analgesic medicinal substance. As demonstrated by the organotypic tissue culture method, all active and inactive peptides studied do not trigger the downstream signaling cascades controlling neurite outgrowth and should not be expected to evoke adverse side effects on the tissue level upon their medicinal administration. The conformational analysis of Ac-RAR-NH2, Ac-RER-NH2, Ac-RAAR-NH2, Ac-REAR-NH2, Ac-RERR-NH2, Ac-REAAR-NH2, Ac-PRERRA-NH2, and Ac-PRARRA-NH2 has made it possible to find the structural parameter, the value of which is correlated with the target physiological effect of arginine-containing short peptides. The distances between the positively charged guanidinium groups of the arginine side chains involved in intermolecular ligand–receptor ion–ion bonds between the attacking peptide molecules and the NaV1.8 channel molecule should fall within a certain range, the lower threshold of which is estimated to be around 9 Å. The distance values have been calculated to be below 9 Å in the inactive peptide molecules, except for Ac-RER-NH2, and in the range of 9–12 Å in the active peptide molecules