EMITTING AND NON-EMITTING JUNCTIONS OF CHARGE CARRIERS IN SEMICONDUCTOR HETEROSTRUCTURES

Abstract

The new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum structures has been supposed firstly. It has been shown firstly that the rate of the new process is the power temperature function. The analytical expressions obtained for the Auger-recombination rate as an function of the quantum hole parameters enable to optimize the laser structure for a purpose of decreasing threshold current and increasing quantum outputAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio