Twinning superlattices in indium phosphide nanowires

Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by controlling the crystal structure, induce twinning superlattices with long-range order in InP nanowires. We can tune the spacing of the superlattices by the wire diameter and the zinc concentration and present a model based on the cross-sectional shape of the zinc-blende InP nanowires to quantitatively explain the formation of the periodic twinning.Comment: 18 pages, 4 figure

Generic nano-imprint process for fabrication of nanowire arrays

A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.Comment: 12 pages, 4 figures, 2 table

From InSb Nanowires to Nanocubes: Looking for the Sweet Spot

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the “local” growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10^4 cm^2 V^(–1) s^(–1) enable the realization of complex spintronic and topological devices

On the Role of Faith in Sustainability Management: A Conceptual Model and Research Agenda

International audienceThe objective of this article is to develop a faith development perspective on corporate sustainability. A firm’s management of sustainability is arguably determined by the way decision-makers relate to the other and the natural environment, and this relationship is fundamentally shaped by faith. This study advances theoretical understanding of the approach managers take on sustainability issues by explaining how four distinct phases of faith development—improvidence, obedience, irreverence and providence—determine a manager’s disposition towards sustainability. Combining insights from intentional and relational faith development theories, the analysis reveals that a manager’s faith disposition can be measured according to four interrelated process criteria: (1) connectivity as a measure of a manager’s actual engagement and activities aimed at relating to sustainability; (2) inclusivity as a measure of who and what is included or excluded in a manager’s moral consideration; (3) emotional affinity as a measure of a manager’s sensitivity and affection towards the well-being of others and ecological welfare; and (4) reciprocity as a measure of the degree to which a manager is rewarded for responding to the needs and concerns of ‘Others’, mainly in the form of a positive emotional (and relational) stimulus. The conceptual model consolidates earlier scholarly works on the psychological drivers of sustainability management by illuminating our search for a process of faith development that connects with an increasingly complex understanding of the role of business in society

High optical quality single crystal phase wurtzite and zincblende InP nanowires

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor–liquid–solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities. The WZ NWs show no acceptor-related emission, implying that the VLS-grown NW is almost free of impurities due to sidewall removal by HCl. They only emit light at the free exciton (1.491 eV) and the donor bound exciton transition (1.4855 eV). The ZB NWs exhibit a photoluminescence spectrum being unaffected by the twinning planes. Surprisingly, the acceptor-related emission in the ZB NWs can be almost completely removed by etching away the impurity-contaminated sidewall grown via a vapor–solid mechanism

Formation and electronic properties of InSb nanocrosses

Signatures of Majorana fermions have recently been reported from measurements on hybrid superconductor–semiconductor nanowire devices. Majorana fermions are predicted to obey special quantum statistics, known as non-Abelian statistics. To probe this requires an exchange operation, in which two Majorana fermions are moved around one another, which requires at least a simple network of nanowires. Here, we report on the synthesis and electrical characterization of crosses of InSb nanowires. The InSb wires grow horizontally on flexible vertical stems, allowing nearby wires to meet and merge. In this way, near-planar single-crystalline nanocrosses are created, which can be measured by four electrical contacts. Our transport measurements show that the favourable properties of the InSb nanowire devices—high carrier mobility and the ability to induce superconductivity—are preserved in the cross devices. Our nanocrosses thus represent a promising system for the exchange of Majorana fermions