Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work. The blend of low bandgap poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7) and [6,6]-phenyl-C71-butyric acid methylester (PC71BM) is employed as the photoactive layer here. A power conversion efficiency (PCE) of 5.55% is achieved for such indium tin oxide- (ITO-) free OSCs under AM 1.5G simulated illumination, comparable to that of ITO-based reference OSCs (PCE of 6.11%). It is found that this ZnO interlayer not only slightly enhances the transparency of MoO3/Ag cathode but also obtains a lower root-mean-square (RMS) roughness on the MoO3/Ag surface. Meanwhile, ITO-free OSCs also show a good stability. The PCE of the devices still remains above 85% of the original values after 30 days, which is slightly superior to ITO-based reference OSCs where the 16% degradation in PCE is observed after 30 days. It may be instructive for further research of OSCs based on metal thin film electrodes

Actively Tunable Fano Resonance Based on a Bowtie-Shaped Black Phosphorus Terahertz Sensor

An ultrasensitive Terahertz (THz) sensor consisting of the sub-wavelength bowtie black phosphorus (BP) and an annular gold (Au) ring is proposed. The interference between the resonance generated by the bowtie BP and the Au ring creates a Fano-type resonance and makes ultrasensitive sensing realizable. Firstly, we demonstrate the Fano resonance of the coupled nanostructures by adjusting the geometry dimensions of the Au ring and the Fermi level of BP. Moreover, the Poynting vector distributions of the THz sensor are simulated to analyze the properties of Fano resonance. Importantly, a figure of merit (FOM) value as high as 69.3 is achieved and the proposed Fano resonance sensor shows a maximum sensitivity of 9.3 μm/RIU. Our structure can function as a facile and efficient building block of biochemical nano-sensing application based on Fano resonance at THz frequency

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Abstract Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current I DS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage V GS corresponding to steep SS are consistent and clockwise I DS-V GS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf0.52Zr0.48O2 achieves the higher I DS but larger hysteresis compared to the other compositions. NCFET with Hf0.67Zr0.33O2 can obtain the excellent performance with hysteresis-free curves and high I DS

Dose optimisation based on pharmacokinetic/pharmacodynamic target of tigecycline

ABSTRACT: Tigecycline, a new first-in-class glycylcycline antibiotic, has shown promising efficacy against a broad range of micro-organisms. It is widely prescribed for various infections, with most prescriptions being considered for off-label use. However, only a few years after its approval by the US Food and Drug Administration (FDA), tigecycline is suspected of increasing all-cause mortality. Some clinicians have suggested such unfavourable outcomes correlate with inadequate drug exposure at the infection site. The pharmacokinetic/pharmacodynamic (PK/PD) profile of a drug plays an important role in predicting its antibiotic effect, which for tigecycline is determined as the ratio of area under the concentration–time curve (AUC) to minimum inhibitory concentration (MIC). In this study, PK/PD targets based on infection sites, bacterial isolates and patient populations are discussed. Generally, a higher dosage of tigecycline for the treatment of serious infections has been recommended in previous reports. However, the latest finding of tigecycline's atypical protein binding property requires consideration when recommending further use. In addition, combination therapy with other antibiotics provides another option by potentially lowering the MICs of multidrug-resistant bacteria

Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

Abstract We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si t Si, (001)-oriented Ge pMOSFETs achieve the higher on-state current I ON and effective hole mobility μ eff compared to the devices on other orientations. At an inversion charge density Q inv of 3.5 × 1012 cm−2, Ge(001) transistors with 0.9 nm t Si demonstrate a peak μ eff of 278 cm2/V × s, which is 2.97 times higher than the Si universal mobility. With the decreasing of t Si, I ON of Ge transistors increases due to the reduction of capacitive effective thickness, but subthreshold swing and leakage floor characteristics are degraded attributed to the increasing of midgap D it

Electro-Optical Modulation in High Q Metasurface Enhanced with Liquid Crystal Integration

Electro-optical tuning metasurfaces are particularly attractive since they open up routes for dynamic reconfiguration. The electro-optic (EO) modulation strength essentially depends on the sensitivity to the EO-induced refractive index changes. In this paper, lithium niobate (LiNbO3) metasurfaces integrated with liquid crystals (LCs) are theoretically investigated. Cylinder arrays are proposed to support quasi-bound states in the continuum (quasi-BICs). The quasi-BIC resonances can significantly enhance the lifetime of photons and the local field, contributing to the EO-refractive index changes. By integrating metasurfaces with LCs, the combined influence of the LC reorientation and the Pockels electro-optic effect of LiNbO3 is leveraged to tune the transmitted wavelength and phase spectrum around the quasi-BIC wavelength, resulting in an outstanding tuning sensitivity up to Δλ/ΔV ≈ 0.6 nm/V and relieving the need of high voltage. Furthermore, the proposed structure can alleviate the negative influence of sidewall tilt on device performance. The results presented in this work can foster wide application and prospects for the implementation of tunable displays, light detection and ranging (LiDAR), and spatial light modulators (SLMs)