Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work. The blend of low bandgap poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7) and [6,6]-phenyl-C71-butyric acid methylester (PC71BM) is employed as the photoactive layer here. A power conversion efficiency (PCE) of 5.55% is achieved for such indium tin oxide- (ITO-) free OSCs under AM 1.5G simulated illumination, comparable to that of ITO-based reference OSCs (PCE of 6.11%). It is found that this ZnO interlayer not only slightly enhances the transparency of MoO3/Ag cathode but also obtains a lower root-mean-square (RMS) roughness on the MoO3/Ag surface. Meanwhile, ITO-free OSCs also show a good stability. The PCE of the devices still remains above 85% of the original values after 30 days, which is slightly superior to ITO-based reference OSCs where the 16% degradation in PCE is observed after 30 days. It may be instructive for further research of OSCs based on metal thin film electrodes

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Abstract Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current I DS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage V GS corresponding to steep SS are consistent and clockwise I DS-V GS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf0.52Zr0.48O2 achieves the higher I DS but larger hysteresis compared to the other compositions. NCFET with Hf0.67Zr0.33O2 can obtain the excellent performance with hysteresis-free curves and high I DS

Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

Abstract We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si t Si, (001)-oriented Ge pMOSFETs achieve the higher on-state current I ON and effective hole mobility μ eff compared to the devices on other orientations. At an inversion charge density Q inv of 3.5 × 1012 cm−2, Ge(001) transistors with 0.9 nm t Si demonstrate a peak μ eff of 278 cm2/V × s, which is 2.97 times higher than the Si universal mobility. With the decreasing of t Si, I ON of Ge transistors increases due to the reduction of capacitive effective thickness, but subthreshold swing and leakage floor characteristics are degraded attributed to the increasing of midgap D it