Ferroelectric and anomalous quantum Hall states in bare rhombohedral trilayer graphene

Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like magnets, and an unconventional superconductor in bilayer graphene. Its natural extension, rhombohedral trilayer graphene is predicted to be even more susceptible to interactions given its even flatter low-energy bands and larger winding number. Theoretically, five spontaneous quantum Hall phases have been proposed to be candidate ground states. Here, we provide transport evidence for observing four of the five competing ordered states in interaction-maximized, dually-gated, rhombohedral trilayer graphene. In particular, at vanishing but finite magnetic fields, two states with Chern numbers 3 and 6 can be stabilized at elevated and low electric fields, respectively, and both exhibit clear magnetic hysteresis. We also reveal that the quantum Hall ferromagnets of the zeroth Landau level are ferroelectrics with spontaneous layer polarizations even at zero electric field, as evidenced by electric hysteresis. Our findings exemplify the possible birth of rich interacting electron physics in a simple elementary material

Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers

The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several $\mu$m, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations

Relative stability of bernal and rhombohedral stackings in trilayer graphene under distortions

Resumen del trabajo presentado al ImagineNano, celebrado en Bilbao (España) del 23 al 25 de abril de 2021.Peer reviewe

Relative stability of bernal and rhombohedral stackings in trilayer graphene under distortions

Resumen del trabajo presentado al ImagineNano, celebrado en Bilbao (España) del 23 al 25 de abril de 2021.Peer reviewe

On the quest for rhombohedral stacking in graphene

Resumen del trabajo presentado a la conferencia Graphene, celebrada en Grenoble (Francia) del 26 al 29 de octubre de 2021.Peer reviewe

Rhombohedral trilayer graphene is more stable than its Bernal counterpart

Stackings in graphene have a pivotal role in properties that could be useful in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states that can be expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order. However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternating, hexagonal stacking is the most commonly found geometry and has been considered to be the most stable configuration for many years. Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer graphene stackings and showed how delicate this aspect is. These few-layer graphenes appear to have two basic stackings with similar energies. The rhombohedral and Bernal stackings are selected using not only compressions but anisotropic in-plane distortions. Furthermore, switching between stable stackings is more clearly induced by deformations such as shear and breaking of the symmetries between graphene sublattices, which can be accessed during selective synthesis approaches. We seek a guide on how to better control – by preserving and changing – the stackings in multilayer graphene samples.This research was funded by the Spanish Ministry of Science and Innovation (grants no. PID2019-105488GB-I00), the Gobierno Vasco UPV/EHU (project no. IT-1569-22), and the European Commission NRG-STORAGE project (project no. GA 870114) and H2020-FET OPEN Project MIRACLE (No. GA 964450). This research was conducted in the scope of the Transnational Common Laboratory (LTC) “Aquitaine-Euskadi Network in Green Concrete and Cement-based Materials”.Peer reviewe

Interplay between topological valley and quantum Hall edge transport

In electrostatically-gapped bilayer graphene, topologically-protected states can emerge at naturally occurring stacking domain walls even in the absence of a magnetic field. Here, the authors describe the interplay between such domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of suspended bilayer graphene

Spontaneous gully-polarized quantum hall states in ABA trilayer graphene

Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction-induced breakdown of gully coherence is explored via magnetotransport measurements in high-quality Bernal-stacked (ABA) trilayer graphene. At zero magnetic field, multiple Lifshitz transitions indicating the formation of Dirac gullies are identified. In the quantum Hall regime, the emergence of Dirac gullies is evident as an increase in Landau level degeneracy. When tuning both electric and magnetic fields, electron–electron interactions can be controllably enhanced until, beyond critical electric and magnetic fields, the gully degeneracy is eventually lifted. The arising correlated ground state is consistent with a previously predicted nematic phase that spontaneously breaks the rotational gully symmetry