Laser Wakefield Acceleration in the linear and non-linear regime

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Nonlinear electrostatic emittance compensation in kA, fs electron bunches

Nonlinear space-charge effects play an important role in emittance growth in the production of kA electron bunches with a bunch length much smaller than the bunch diameter. We propose a scheme employing the radial third-order component of an electrostatic acceleration field, to fully compensate the nonlinear space-charge effects. This results in minimal transverse root-mean-square emittance. The principle is demonstrated using our design simulations of a device for the production of high-quality, high-current, subpicosecond electron bunches using electrostatic acceleration in a 1 GV/m field. Simulations using the GPT code produce a bunch of 100 pC and 73 fs full width at half maximum pulse width, resulting in a peak current of about 1.2 kA at an energy of 2 MeV. The compensation scheme reduces the root-mean-square emittance by 34% to 0.4p mm mrad

A bright ultracold atoms-based electron source

An important application of pulsed electron sources is Ultrafast Electron Diffraction [1]. In this technique, used e.g. in chemistry, biology and condensed matter physics, one can observe processes that take place at the microscopic level with sub-ps resolution. To reach the holy grail of UED, single-shot diffraction images of biologically relevant molecules, electron bunches of 1pC charge, 100fs length and 10nm coherence length are required. Conventional pulsed electron sources cannot fulfil these requirements, but according to the simulations reported in [2] and [3] a new type of source can.The new source combines the use of magneto-optical atom trapping with fast high voltage technology. We start by cooling and trapping rubidium atoms, followed by ionisation just above threshold, leading to an ultracold plasma. Another possibility is to excite the atoms into a high Rydberg level, from which they spontaneously evolve into an ultracold plasma. Applying a fast high voltage pulse, electron bunches can be extracted. In an initial study [2] it has been shown that this type of source can provide a very high brightness. Depending on the initial particle distribution, the reduced brightness can be in the order of 1x109 A/(rad2m2V), which is orders of magnitude higher than established technology such as an electron photogun can provide.Here we report the first experiments toward realisation of the source. Here, a simple accelerator structure consists of four bars surrounding a MOT, on which an 800V pulsed voltage with a rise time of 1ƒÝs is applied. An MCP together with a phosphor screen and a CCD camera are used as detection system. The bunch size obtained from the phosphor screen is fitted with a Gaussian distribution, from which the electron temperature is extracted. For small extracted charges, the electron temperature is found to have an upper limit of 500K, the measurement being limited by stray magnetic fields due to the low electron energy (10eV). We have also extracted a pulsed ion beam by reversing the sign of the accelerating voltage. Since ions are heavier, they obtain higher energy and are less influenced by the magnetic fields. The temperature in this case is found to b

Compression of sub-relativistic space-charge-dominated electron bunches for singleshot femtosecond electron diffraction

We demonstrate the compression of 95 keV, space-charge-dominated electron bunches to sub-100 fs durations. These bunches have sufficient charge (200 fC) and are of sufficient quality to capture a diffraction pattern with a single shot, which we demonstrate by a diffraction experiment on a polycrystalline gold foil. Compression is realized by means of velocity bunching by inverting the positive space-charge-induced velocity chirp. This inversion is induced by the oscillatory longitudinal electric field of a 3 GHz radio-frequency cavity. The arrival time jitter is measured to be 80 fs

Performance predictions of a focused ion beam based on laser cooling

Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of amongst others the flux density of the atomic beam, the temperature of this beam and the total current. At low currents (

Simulating Electron Impact Ionization Using a General Particle Tracer (GPT) Custom Element

A new C++ custom element has been developed with the framework of General Particle Tracer (GPT) to simulate electron impact ionization of residual gas molecules. The custom element uses Monte-Carlo routines to determine both the ion production rate and the secondary electron kinetic energy based on user-defined gas densities and theoretical values for the ionization cross section and the secondary electron differential cross section. It then uses relativistic kinematics to track the secondary electron, the scattered electron, and the newly formed ion after ionization. The ion production rate and the secondary electron energy distribution determined by the custom element have been benchmarked against theoretical calculations and against simulations made using the simulation package IBSimu. While the custom element was originally built for particle accelerator simulations, it is readily extensible to other applications. The custom element will be described in detail and examples of applications at the Thomas Jefferson National Accelerator Facility will be presented for ion production in a DC high voltage photo-gun

Laser-cooled ion source

Focused Ion Beams (FIB) are widely used in the semiconductor industry for milling, sputtering and imaging applications. In particular it is used for quality control of wafers, by using a combination of a FIB and an electron microscope to make cross-sectional inspections of wafers. In addition, FIB's are used for mask repair through gas-assisted etching

Ultracold Electron Source

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Application of laser-cooling to achieve an ultra-cold ion beam for FIB

A new type of ultra-cold ion source is under development which employs transverse laser cooling and compression of a thermal atomic rubidium beam followed by photo-ionization. The resulting ultra-cold plasma is focused to a nanometer-sized spot using an existing Focused Ion Beam column and this spot can be used for the fabrication of nano-structures. Simulations of a 10 cm long laser-cooling stage and of disorder-induced heating of the resulting ion beam, predict an achievable brightness for87Rb+ of order 107 A/m2 sr eV at an longitudinal energy spread of less than 1 eV and a current of tens of pA, which is substantially better than conventional ion sources. Experimental realization of the compact ion source has recently started with the development of an efficient high-flux atom source and a 2D laser cooler. Progress on these items will be reported

Ultracold Electron Source

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