1 research outputs found
In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>P Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
Semiconductor
nanowires are versatile building blocks for optoelectronic devices,
in part because nanowires offer an increased freedom in material design
due to relaxed constraints on lattice matching during the epitaxial
growth. This enables the growth of ternary alloy nanowires in which
the bandgap is tunable over a large energy range, desirable for optoelectronic
devices. However, little is known about the effects of doping in the
ternary nanowire materials, a prerequisite for applications. Here
we present a study of p-doping of In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>P nanowires and show that the growth
dynamics are strongly affected when diethylzinc is used as a dopant
precursor. Specifically, using in situ optical reflectometry and high-resolution
transmission electron microscopy we show that the doping results in
a smaller nanowire diameter, a more predominant zincblende crystal
structure, a more Ga-rich composition, and an increased axial growth
rate. We attribute these effects to changes in seed particle wetting
angle and increased TMGa pyrolysis efficiency upon introducing diethylzinc.
Lastly, we demonstrate degenerate p-doping levels in In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>P nanowires
by the realization of an Esaki tunnel diode. Our findings provide
insights into the growth dynamics of ternary alloy nanowires during
doping, thus potentially enabling the realization of such nanowires
with high compositional homogeneity and controlled doping for high-performance
optoelectronics devices