Elastic Modulus of Amorphous SiO\u3csub\u3e2\u3c/sub\u3e Nanowires

Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition(CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM).Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6±7.2GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending

Formation Mechanism of Guided Resonances and Bound States in the Continuum in Photonic Crystal Slabs

We develop a formalism, based on the mode expansion method, to describe the guided resonances and bound states in the continuum (BICs) in photonic crystal slabs with one-dimensional periodicity. This approach provides analytic insights to the formation mechanisms of these states: the guided resonances arise from the transverse Fabry-P\'erot condition, and the divergence of the resonance lifetimes at the BICs is explained by a destructive interference of radiation from different propagating components inside the slab. We show BICs at the center and on the edge of the Brillouin zone protected by symmetry, as well as BICs at generic wave vectors not protected by symmetry.Comment: 12 pages, 3 figure

Valley-Hall photonic topological insulators with dual-band kink states

Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF has been introduced into photonic systems, and several valley-Hall photonic topological insulators (PTIs) have been experimentally demonstrated. However, in the previous valley-Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here we experimentally demonstrate a valley-Hall PTI, where the topological kink states exist at two separated frequency bands, in a microwave substrate-integrated circuitry. Both the simulated and experimental results demonstrate the dual-band valley-Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible inter-valley scattering. Our work may pave the way for multi-channel substrate-integrated photonic devices with high efficiency and high capacity for information communications and processing

Realization of a three-dimensional photonic topological insulator

Confining photons in a finite volume is in high demand in modern photonic devices. This motivated decades ago the invention of photonic crystals, featured with a photonic bandgap forbidding light propagation in all directions. Recently, inspired by the discoveries of topological insulators (TIs), the confinement of photons with topological protection has been demonstrated in two-dimensional (2D) photonic structures known as photonic TIs, with promising applications in topological lasers and robust optical delay lines. However, a fully three-dimensional (3D) topological photonic bandgap has never before been achieved. Here, we experimentally demonstrate a 3D photonic TI with an extremely wide (> 25% bandwidth) 3D topological bandgap. The sample consists of split-ring resonators (SRRs) with strong magneto-electric coupling and behaves as a 'weak TI', or a stack of 2D quantum spin Hall insulators. Using direct field measurements, we map out both the gapped bulk bandstructure and the Dirac-like dispersion of the photonic surface states, and demonstrate robust photonic propagation along a non-planar surface. Our work extends the family of 3D TIs from fermions to bosons and paves the way for applications in topological photonic cavities, circuits, and lasers in 3D geometries