Reconfigurable frequency multipliers based on graphene field‑effect transistors

This work is part of the research project P21_00149 ENERGHENE funded by Consejería de Universidad, Investigación e Innovación de la Junta de Andalucía. This work is also supported by FEDER/Junta de Andalucía - Consejería de Transformación Económica, Industria, Conocimiento y Universidades through the projects P20-00633 and A-TIC-646-UGR20, by Spanish Government through projects PID2020-116518GBI00 funded by MCIN/AEI/10.13039/501100011033 and TED2021-129769B-I00 funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR. F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014-2020 no. 20804. M. D. Ganeriwala acknowledges funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 101032701.Supplementary information The online version contains supplementary material available at (https://doi.org/10.1186/s11671-023-03884-8).Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable electronics lies in ambipolarity, which is easily accessible in a substantial number of two-dimensional materials, either by contact engineering or architecture device-level design. In this work, we showcase graphene as an optimal solution to implement high-frequency reconfigurable electronics. We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier. The study is based on a physically based numerical simulator validated and tested against experiments. The proposed architecture is evaluated in terms of its performance as a tunable frequency multiplier, able to switch between doubler, tripler or quadrupler operation modes. Different material and device parameters are analyzed, and their impact is assessed in terms of the reconfigurable graphene frequency multiplier performance.Research project P21_00149 ENERGHENE funded by Consejería de Universidad, Investigación e Innovación de la Junta de AndalucíaFEDER/Junta de Andalucía - Consejería de Transformación Económica, Industria, Conocimiento y Universidades through the projects P20-00633 and A-TIC-646-UGR20Spanish Government through projects PID2020-116518GBI00MCIN/AEI/10.13039/501100011033European Union NextGenerationEU/PRTRPAIDI 2020 and the European Social Fund Operational Programme 2014-2020 no. 20804.European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 10103270

Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories

This work is funded by the FEDER/Junta de Andalucía through the projects A-TIC-646-UGR20 and P20-00633, and the Spanish Government MCIN/AEI/10.13039/501100011033 through the projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU program FPU019/05132, and M.D. Ganeriwala the EU through project H2020-MSCA-IF 2020.We simulate voltage-driven ion migration in gate oxides as a potential mechanism to develop non-volatile memories (NVMs) as appropriate candidates for neuromorphic computing applications. Our study aims to give insights about the impact of ion mobility and ion concentration in the device memory window (MW).FEDER/Junta de Andalucía A-TIC-646-UGR20, P20-00633Spanish Government MCIN/AEI/10.13039/501100011033: PID2020-116518GB-I00, TED2021-129769B-I00NextGenerationEU/PRTRPAIDI 2020European Social Fund Operational Programme 2014–2020 no. 20804FPU program FPU019/05132EU H2020-MSCA-IF 202