A water vision for Johnstone

The Water Vision is based on ideas from The Netherlands which promote communication with the public on key water related issues in a local authority area. A Water Vision for Johnstone was developed in Renfrewshire, Scotland where serious flooding has occurred in the past and new, predominantly non-structural approaches to surface water management were demanded. The paper outlines the development of a ‘Water Vision for Johnstone’ which became a key outcome of the Interreg III B project ‘Urban Water’.The Water Toets (Assessments) are statutory procedures in the Netherlands which come into play from the concept stage of developments onwards to full implementation. They are undertaken jointly on behalf of the spatial planning authority and the water authorities to evaluate the impact of development on the water network. In contrast, the Water Vision is a less well-defined process to identify community needs and aspirations but in many areas the vision is essential to support the Water Toets. The Water Vision is initiated by planning officers from the municipalities asking very basic questions of their communities about what they required of the water network. It was felt that adopting such a proactive approach where virtually any question about water bodies and drainage infrastructure could be asked, would not be practicable in the UK and it was decided to assemble information about water issues in the area, the agencies involved and potential ways forward, before approaching the public.Johnstone was selected as a test area as it was felt that this locality included many of the water related problems that can be found throughout Renfrewshire. Key water issues were identified and a range of possible solutions provided. Problems, solutions and organisations responsible for different aspects of the water network are described in the document, using images and plans to facilitate the public awareness. Normally the man in the street would not be expected to be as familiar with the nature of water-related problems as the general public in the Netherlands. The Water Vision is yet to go to public consultation as it is currently primarily a planning tool in which council processes are embedded. However, it is planned that workshops including all key stakeholders involved in water management will be held. Those bodies currently responsible for water management will then be encouraged to discuss the various options and opportunities available in a creative and integrated manner. By working together as a team in addressing water related issues it will be possible to develop a vision for the future that better assists the public in moving forward together

Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window

Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range

Ultra Broadband Mid-Infrared Ge-on-Si Polarization Rotator

The design and modelling of an ultra broadband Ge-on-Si waveguide polarization rotator is presented. The polarization rotator demonstrates high extinction ratio (≥ 18.5 dB) and low insertion loss (≤ 1 dB) over the full operating range of 8 to 11 μm wavelength

Germanium-on-silicon Waveguides for Mid-infrared Photonic Sensing Chips

Germanium-on-silicon rib waveguides are modelled, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the waveguide losses at 5.8 μm wavelength

;

http://archive.org/details/determinationofc00gallN

Group-IV midinfrared plasmonics

The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials

Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared

Measurements of sidewall roughness by atomic force microscopy has been used to understand the waveguides losses of Ge-on-Si mid-infrared rib waveguides. Simulations indicate the measured roughness is well below values corresponding to the measured losses indicating sidewall roughness scattering is not the dominant loss mechanism

Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors

The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor

n-Ge on Si for Mid-Infrared Plasmonic Sensors

The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials