Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

Room temperature electroluminescence in the midinfrared near 4 µm is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the electro- and photoluminescence revealed that light is generated on the p side of the diode. The energy shift (24 meV) is consistent with band gap narrowing and recombination via band tail states due to the Zn doping (1×1018 cm−3) in the p layer of the structure. The temperature dependent behavior of the luminescence and the improved emission intensity was attributed to recombination from localized states arising from electrostatic potential fluctuations due to compositional inhomogeneities in these alloys

Exciton spin decay modified by strong electron-hole exchange interaction

We study exciton spin decay in the regime of strong electron-hole exchange interaction. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. The calculations provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.Comment: 5 pages, 3 figure

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation