2 research outputs found
A blueprint for the synthesis and characterization of thiolated graphene
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two step liquid phase treatment of graphene oxide GO . Employing the core level methods, the introduction of up to 5.1 at. of thiols is indicated with the simultaneous rise of the C O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 k amp; 937; sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart material
ΠΠ²ΡΠΎΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΡΠ΅ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΠΏΠ»Π΅Π½ΠΎΠΊ Π½ΠΈΠΊΠ΅Π»Ρ - ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΠΎΠ³ΠΎ Π½Π°Π½ΠΎΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠ°
Field-emission properties of Ni-C nanocomposite thin films were experimentally studied. The films were deposited at Si substrates using CVD technique with a metalloorganic precursor and were composed by nm-scale grains of metallic Ni bounded with a carbonic weakly-conducting matrix. In the samples with lower effective thickness, the Ni particles were separated from each other. Such films showed capability of facilitated emission with threshold field values as low as a few V/ΞΌm. Thicker coating samples, with metallic particle merged in a conductive layer, required annealing at 470-600 Β°Π‘ in vacuum to produce low-field emission current. The observed emission behavior agrees with the previously proposed model considering low-field emission from nanostructured carbonic materials as a multi-stage process involving generation of hot electrons at interface boundaries.ΠΡΠ»ΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ Π°Π²ΡΠΎΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΡΠ΅ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΡΠΎΠ½ΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ Π½ΠΈΠΊΠ΅Π»Ρ-ΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΠΎΠ³ΠΎ Π½Π°Π½ΠΎΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠ°.
ΠΠ»Π΅Π½ΠΊΠΈ Π½Π°Π½ΠΎΡΠΈΠ»ΠΈΡΡ Π½Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΠ΅ ΠΏΠΎΠ΄Π»ΠΎΠΆΠΊΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΡΠ³Π°Π½ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΡΠ΅ΠΊΡΡΡΠΎΡΠ°. ΠΡ
ΡΡΡΡΠΊΡΡΡΠ° Π²ΠΊΠ»ΡΡΠ°Π»Π° Π² ΡΠ΅Π±Ρ Π½Π°Π½ΠΎΡΠ°Π·ΠΌΠ΅ΡΠ½ΡΠ΅ Π·Π΅ΡΠ½Π° ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π½ΠΈΠΊΠ΅Π»Ρ, ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ ΡΠ»Π°Π±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅ΠΉ ΡΠ³Π»Π΅ΡΠΎΠ΄ΠΎΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠ΅ΠΉ ΠΌΠ°ΡΡΠΈΡΠ΅ΠΉ. Π ΡΠ»ΡΡΠ°Π΅
ΠΏΠΎΠΊΡΡΡΠΈΠΉ ΠΌΠ°Π»ΠΎΠΉ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠΉ ΡΠΎΠ»ΡΠΈΠ½Ρ, ΡΠ°ΡΡΠΈΡΡ Π½ΠΈΠΊΠ΅Π»Ρ Π±ΡΠ»ΠΈ ΠΎΡΠ΄Π΅Π»Π΅Π½Ρ Π΄ΡΡΠ³ ΠΎΡ Π΄ΡΡΠ³Π°. Π’Π°ΠΊΠΈΠ΅
ΠΏΠ»Π΅Π½ΠΊΠΈ Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠΈΡΠΎΠ²Π°Π»ΠΈ ΡΠΏΠΎΡΠΎΠ±Π½ΠΎΡΡΡ ΠΊ Π½ΠΈΠ·ΠΊΠΎΠ²ΠΎΠ»ΡΡΠ½ΠΎΠΉ ΡΠΌΠΈΡΡΠΈΠΈ Π² ΠΏΠΎΠ»ΡΡ
Ρ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎΡΡΡΡ ΠΎΡ
Π½Π΅ΡΠΊΠΎΠ»ΡΠΊΠΈΡ
Π/ΠΌΠΊΠΌ. Π Π±ΠΎΠ»Π΅Π΅ ΡΠΎΠ»ΡΡΡΡ
ΠΏΠΎΠΊΡΡΡΠΈΡΡ
ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ°ΡΡΠΈΡΡ ΠΎΠ±ΡΠ°Π·ΠΎΠ²ΡΠ²Π°Π»ΠΈ Π΅Π΄ΠΈΠ½ΡΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠΈΠΉ ΡΠ»ΠΎΠΉ. Π ΡΡΠΎΠΌ ΡΠ»ΡΡΠ°Π΅ Π΄Π»Ρ Π½Π°Π±Π»ΡΠ΄Π΅Π½ΠΈΡ Π½ΠΈΠ·ΠΊΠΎΠ²ΠΎΠ»ΡΡΠ½ΠΎΠΉ ΡΠΌΠΈΡΡΠΈΠΈ ΡΡΠ΅Π±ΠΎΠ²Π°Π»ΡΡ ΠΎΡΠΆΠΈΠ³ ΠΎΠ±ΡΠ°Π·ΡΠΎΠ² Π² Π²Π°ΠΊΡΡΠΌΠ΅ ΠΏΡΠΈ 470-600 Β°Π‘.
ΠΠ°Π±Π»ΡΠ΄Π°Π²ΡΠΈΠ΅ΡΡ Π·Π°ΠΊΠΎΠ½ΠΎΠΌΠ΅ΡΠ½ΠΎΡΡΠΈ ΡΠΌΠΈΡΡΠΈΠΈ ΡΠΎΠ³Π»Π°ΡΡΡΡΡΡ Ρ ΠΏΡΠ΅Π΄Π»Π°Π³Π°Π²ΡΠ΅ΠΉΡΡ ΡΠ°Π½Π΅Π΅ ΠΌΠΎΠ΄Π΅Π»ΡΡ,
ΠΊΠΎΡΠΎΡΠ°Ρ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅Ρ Π½ΠΈΠ·ΠΊΠΎΠ²ΠΎΠ»ΡΡΠ½ΡΡ ΡΠΌΠΈΡΡΠΈΡ ΠΈΠ· Π½Π°Π½ΠΎΡΠ³Π»Π΅ΡΠΎΠ΄Π½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² ΠΊΠ°ΠΊ ΠΌΠ½ΠΎΠ³ΠΎΡΡΠ°Π΄ΠΈΠΉΠ½ΡΠΉ ΠΏΡΠΎΡΠ΅ΡΡ Ρ ΡΡΠ°ΡΡΠΈΠ΅ΠΌ Π³ΠΎΡΡΡΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², ΠΎΠ±ΡΠ°Π·ΡΡΡΠΈΡ
ΡΡ Π½Π° Π²Π½ΡΡΡΠ΅Π½Π½ΠΈΡ
ΠΌΠ΅ΠΆΠ΄ΠΎΠΌΠ΅Π½Π½ΡΡ
Π³ΡΠ°Π½ΠΈΡΠ°Ρ