Magnetic properties of the spin-1/2 XXZ model on the Shastry-Sutherland lattice: Effect of long-range interactions

We study magnetic properties of the $S=1/2$ Ising-like XXZ model on the Shastry-Sutherland lattices with long-range interactions, using the quantum Monte Carlo method. This model shows magnetization plateau phases at one-half and one-third of the saturation magnetization when additional couplings are considered. We investigate the finite temperature transition to one-half and one-third plateau phases. The obtained results suggest that the former case is of the first order and the latter case is of the second order. We also find that the system undergoes two successive transitions with the 2D Ising model universality, although there is a single phase transition in the Ising limit case. Finally, we estimate the coupling ratio to explain the magnetization process observed in ${\rm TmB_4}$Comment: 5 pages, 6 figure

Magnetization Process of the Classical Heisenberg Model on the Shastry-Sutherland Lattice

We investigate classical Heisenberg spins on the Shastry-Sutherland lattice and under an external magnetic field. A detailed study is carried out both analytically and numerically by means of classical Monte-Carlo simulations. Magnetization pseudo-plateaux are observed around 1/3 of the saturation magnetization for a range of values of the magnetic couplings. We show that the existence of the pseudo-plateau is due to an entropic selection of a particular collinear state. A phase diagram that shows the domains of existence of those pseudo-plateaux in the $(h, T)$ plane is obtained.Comment: 9 pages, 11 figure

Electron self-trapping in intermediate-valent SmB6

SmB6 exhibits intermediate valence in the ground state and unusual behaviour at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf-hybridization or by hopping transport in an impurity band. At least three different energy scales determine three temperature regimes of electron transport in this system. We consider the ground state properties, the soft valence fluctuations and the spectrum of band carriers in n-doped SmB6. The behaviour of excess conduction electrons in the presence of soft valence fluctuations and the origin of the three energy scales in the spectrum of elementary excitations is discussed. The carriers which determine the low-temperature transport in this system are self-trapped electron-polaron complexes rather than simply electrons in an impurity band. The mechanism of electron trapping is the interaction with soft valence fluctuations.Comment: 12 pages, 3 figure

The energy gap of intermediate-valent SmB6 studied by point-contact spectroscopy

We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between less than 0.01 mikrosiemens and up to 1 mS. The position of the spectral anomalies, which are related to the different activation energies and band gaps of SmB6, did not depend on the the contact size. Two different regimes of charge transport could be distinguished: Contacts with large zero - bias conductance are in the diffusive Maxwell regime. They had spectra with only small non-linearities. Contacts with small zero - bias conductance are in the tunnelling regime. They had larger anomalies, but still indicating a finite 45 % residual quasiparticle density of states at the Fermi level at low temperatures of T = 0.1 K. The density of states derived from the tunelling spectra can be decomposed into two energy-dependent parts with Eg = 21 meV and Ed = 4.5 meV wide gaps, respectively.Comment: 9 pages incl. 13 figure

Nonlinear excitations in CsNiF3 in magnetic fields perpendicular to the easy plane

Experimental and numerical studies of the magnetic field dependence of the specific heat and magnetization of single crystals of CsNiF3 have been performed at 2.4 K, 2.9 K, and 4.2 K in magnetic fields up to 9 T oriented perpendicular to the easy plane. The experimental results confirm the presence of the theoretically predicted double peak structure in the specific heat arising from the formation of nonlinear spin modes. The demagnetizing effects are found to be negligible, and the overall agreement between the data and numerical predictions is better than reported for the case when the magnetic field was oriented in the easy plane. Demagnetizing effects might play a role in generating the difference observed between theory and experiment in previous work analyzing the excess specific heat using the sine-Gordon model.Comment: 6 pages, 5 figures, submitted to Phys. Rev.

Electrical Resistance Anomalies in Holmium Thin Films below 20 K in Magnetic Field

Electrical resistance (R) of Ho thin films evaporated in vacuum ≈ $10^{-7}$ Pa was studied in a temperature range from 2 K up to 300 K and in magnetic field up to 9 T. Measurements showed resistance anomalies below 20 K - minima of R value in 36 nm and 215 nm thin films and resistivity maximum at 3.58 K in 215 nm Ho film. Increasing value of the magnetic field, applied perpendicular to film surface up to 5 T, caused increasing suppression of the R minima in these films with subsequent disappearance of them in fields above 5 T. Maximum of R value in 215 nm thin film at 3.58 K decreased with increasing flux density up to 5 T and it was suppressed at fields above 5 T. X-ray diffraction of these films revealed two phases composition consisting of the hexagonal Ho and of cubic $HoH_2$. The preferential crystal orientation of both phases was detected