13,074 research outputs found
Zero field spin polarization in a 2D paramagnetic resonant tunneling diode
We study I-V characteristics of an all-II-VI semiconductor resonant tunneling
diode with dilute magnetic impurities in the quantum well layer. Bound magnetic
polaron states form in the vicinity of potential fluctuations at the well
interface while tunneling electrons traverse these interface quantum dots. The
resulting microscopic magnetic order lifts the degeneracy of the resonant
tunneling states. Although there is no macroscopic magnetization, the resulting
resonant tunneling current is highly spin polarized at zero magnetic field due
to the zero field splitting. Detailed modeling demonstrates that the local spin
polarization efficiency exceeds 90% without an external magnetic field.Comment: 7 pages, 10 figures (including supplementary information
Static inverters which sum a plurality of waves Patent
Describing static inverter with single or multiple phase outpu
Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
A novel magnetoresistance effect, due to the injection of a spin-polarized
electron current from a dilute magnetic into a non-magnetic semiconductor, is
presented. The effect results from the suppression of a spin channel in the
non-magnetic semiconductor and can theoretically yield a positive
magnetoresistance of 100%, when the spin flip length in the non-magnetic
semiconductor is sufficiently large. Experimentally, our devices exhibit up to
25% magnetoresistance.Comment: 3 figures, submitted for publicatio
Quantum Hall effect in narrow graphene ribbons
The edge states in the integer quantum Hall effect are known to be
significantly affected by electrostatic interactions leading to the formation
of compressible and incompressible strips at the boundaries of Hall bars. We
show here, in a combined experimental and theoretical analysis, that this does
not hold for the quantum Hall effect in narrow graphene ribbons. In our
graphene Hall bar, which is only 60 nm wide, we observe the quantum Hall effect
up to Landau level index k=2 and show within a zero free-parameter model that
the spatial extent of the compressible and incompressible strips is of a
similar magnitude as the magnetic length. We conclude that in narrow graphene
ribbons the single-particle picture is a more appropriate description of the
quantum Hall effect and that electrostatic effects are of minor importance.Comment: RevTex, 5 pages, 4 figures (matches published version
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer
system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.
The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room
temperature which increases to 14.7% at 4.2K. The layers show clear separate
switching and a small ferromagnetic coupling. A uniaxial in plane anisotropy in
the NiMnSb layer leads to different switching characteristics depending on the
direction in which the magnetic field is applied, an effect which can be used
for sensor applications.Comment: 8 pages, 3 figures, submitted to Appl. Phys. Let
Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)
We have investigated the growth by molecular-beam epitaxy of the II-VI
diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates.
The growth start has been optimized by using low-temperature epitaxy. Surface
properties were assessed by Nomarski and scanning electron microscopy. Optical
properties of (Zn,Mn)Se have been studied by photoluminescence and a giant
Zeeman splitting of up to 30 meV has been observed. Our observations indicate a
high crystalline quality of the epitaxial films.Comment: To be published in Applied Physics Letter
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