26.1% thin-film GaAs solar cell using epitaxial lift-off

The epitaxial lift-off technique can be used to separate a III–V solar cell structure from its underlying GaAs substrate. Processing a thin-film cell is somewhat different from a regular cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-film cells as good as cells on a substrate, with record efficiencies for single junction GaAs solar cells of 26.1% for both cell types

A multi-nuclear magnetic resonance and density functional theory investigation of epitaxially grown InGaP 2

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