10 research outputs found

    Photoconductivity and Photoemission of Diamond Under Femtosecond Vuv Irradiation

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    In order to gain some insight on the electronic relaxation mechanisms occuring in diamond under high intensity laser excitation and/or VUV excitation, we studied experimentally the pulsed conductivity induced by femtosecond VUV pulses, as well as the energy spectra of the photoelectrons released by the same irradiation. The source of irradiation consists in highly coherent VUV pulses obtained through high order harmonic generation of a high intensity femtosecond pulse at a 1.55 eV photon energy (titanium-doped sapphire laser). Harmonics H9 to H17 have been used for photoconductivity (PC) and harmonics H13 to H27 for photoemission experiments (PES). As the photon energy is increased, it is expected that the high energy photoelectrons will generate secondary e-h pairs, thus increasing the excitation density and consequently the PC signal. This is not what we observe : the PC signal first increases for H9 to H13, but then saturates and even decreases. Production of low energy secondary e-h pairs should also be observed in the PES spectrum. In fact we observe very few low energy electrons in the PES spectrum obtained with H13 and H15, despite the sufficient energy of the generated free carriers. At the other end (H21 and above), a very intense low energy secondary electron peak is observed. As a help to interprete such data, we realized the first ab initio calculations of the electronic lifetime of quasiparticles, in the GW approximation in a number of dielectrics including diamond. We find that the results are quite close to a simple "Fermi-liquid" estimation using the electronic density of diamond. We propose that a quite efficient mechanism could be the excitation of plasmons by high energy electrons, followed by the relaxation of plasmons into individual e-h pairs

    Influence de la vitesse de solidification sur la structure et les proprietes mecaniques d'alliages de nickel

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    SIGLECNRS T 56006 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

    Interaction of intense femtosecond laser pulses with KDP and DKDP crystals in the short wavelength regime

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    We investigate the electronic photo-excitation and relaxation mechanisms involved in the optical breakdown of potassium dihydrogen phosphate crystal (KH2PO4) and its deuterated form. The dynamics and spectroscopic properties of electron–hole pair formation are investigated using time-resolved measurement of the dielectric function, and luminescence spectroscopy. The non-common mechanical and electronic characteristics of these dielectric materials are revealed by the particular structure of ablation craters and also by the complex dynamics observed in the relaxation of excited carriers. This relaxation occurs in two steps, and varies with the initial carrier density and thus with the laser intensity. We show that the defect states play a key role in the excitation pathways, and also determine the relaxation stage. The latter also depends upon the initial amount of energy of the electron–hole pair after photo-excitation. A model based on kinetic equations describing the evolution of the different level populations allows us to successfully interpret and reproduce the experimental data

    Heating of Conduction Band Electrons by Intense Femtosecond Laser Pulses

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    We present photoelectron spectra for \chem{CsI} excited by intense femtosecond \chem{Ti}-Sapphire laser pulses. A high-energy plateau is detected in the spectra, at excitation intensities above 0.5\un{TW/cm^2}. This plateau extends up to 24\un{eV} at 3\un{TW/cm^2} and 90% of the emitted electrons have energy higher than twice the laser photon energy. Such intensive electron heating in solids cannot be explained in terms of phonon-assisted transitions. A model of direct interbranch transitions in the conduction band is used for the simulation of the heating process

    111. Observation of high energy photoelectrons from solids at moderate laser intensity

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    We investigate the photoemission for a set of wide band-gap crystals irradiated by femtosecond Ti-Sapphire laser pulses at intensities varying from 0.5 to 6 TW/cm(2) (below the optical breakdown threshold). The measured total electron yield increases linearly with the laser intensity in this intensity range. An intense and wide plateau of high energy electrons appears in the photoelectron spectra at excitation intensities larger than 1 TW/cm(2). The exponential cut-off of this plateau reaches 40 eV at maximal applied intensities. In order to explain such a behavior, we propose a mechanism where the heating is due to a sequence of direct interbranch one- and multi-photon transitions in the conduction ban

    Photoconductivity and photoemission studies of diamond irradiated by ultrashort VUV pulses

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    We investigated relaxation of free charge carriers in pure crystalline diamond exposed to VUV irradiation of high order harmonics of femtosecond Ti:Sa laser in the spectral range 17-32 eV. Electron-hole pairs, possessing a significant kinetic energy, are generated in the material via direct interband transitions, relaxation of which is monitored by means of induced conductivity in the bulk and photoemission from the surface of the material. The experimental data provided by these c omplementary techniques are compared and discussed in terms of the competition between ionization and conductivity looking for evidences of multiplication of free charge carriers due to impact ionizatio

    PHOTOCONDUCTIVITY AND PHOTOEMISSION OF DIAMOND UNDER FEMTOSECOND VUV IRRADIATION

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    In order to gain some insight on the electronic relaxation mechanisms occuring in diamond under high intensity laser excitation and/or VUV excitation, we studied experimentally the pulsed conductivity induced by femtosecond VUV pulses, as well as the energy spectra of the photoelectrons released by the same irradiation. The source of irradiation consists in highly coherent VUV pulses obtained through high order harmonic generation of a high intensity femtosecond pulse at a 1.55 eV photon energy (titanium-doped sapphire laser). Harmonics H9 to H17 have been used for photoconductivity (PC) and harmonics H13 to H27 for photoemission experiments (PES). As the photon energy is increased, it is expected that the high energy photoelectrons will generate secondary e-h pairs, thus increasing the excitation density and consequently the PC signal. This is not what we observe : the PC signal first increases for H9 to H13, but then saturates and even decreases. Production of low energy secondary e-h pairs should also be observed in the PES spectrum. In fact we observe very few low energy electrons in the PES spectrum obtained with H13 and H15, despite the sufficient energy of the generated free carriers. At the other end (H21 and above), a very intense low energy secondary electron peak is observed. As a help to interprete such data, we realized the first ab initio calculations of the electronic lifetime of quasiparticles, in the GW approximation in a number of dielectrics including diamond. We find that the results are quite close to a simple "Fermi-liquid" estimation using the electronic density of diamond. We propose that a quite efficient mechanism could be the excitation of plasmons by high energy electrons, followed by the relaxation of plasmons into individual e-h pairs

    Photoconductivité et photoémission de diamant(s) sous irradiation XUV femtoseconde

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    We report à study of the photoconductivity (PC) induced in different types of diamonds (type IIa single crystals and CVD) by femtosecond XUV pulses (high order harmonics - up to 19th - of a titanium doped laser). We also reprot UPS spectras obtained with harmonics 13 to 29. Depending on the harmonic's order, the PC signal first increases (orders 9 to 13) and then decreases. If the increase is easily interpreted as resulting from a carrier multiplication process, the further decrease has not yet received an explanation. The UPS measurements also suggest a strong effect of the plasmon relaxation on the carrier multiplication process. Finally, we performed a preliminary GW ab-initio calculation of the carriers lifetime, acounting for electron-electron interactions. In the near-bandgap region, it behaves approximatively according to the Fermi-liquid model, from which it strongly departs at higher energies, which is attributed to band-structure effects and to plasmon excitations
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