NEOTROPICAL XENARTHRANS: a data set of occurrence of xenarthran species in the Neotropics

Xenarthrans – anteaters, sloths, and armadillos – have essential functions for ecosystem maintenance, such as insect control and nutrient cycling, playing key roles as ecosystem engineers. Because of habitat loss and fragmentation, hunting pressure, and conflicts with 24 domestic dogs, these species have been threatened locally, regionally, or even across their full distribution ranges. The Neotropics harbor 21 species of armadillos, ten anteaters, and six sloths. Our dataset includes the families Chlamyphoridae (13), Dasypodidae (7), Myrmecophagidae (3), Bradypodidae (4), and Megalonychidae (2). We have no occurrence data on Dasypus pilosus (Dasypodidae). Regarding Cyclopedidae, until recently, only one species was recognized, but new genetic studies have revealed that the group is represented by seven species. In this data-paper, we compiled a total of 42,528 records of 31 species, represented by occurrence and quantitative data, totaling 24,847 unique georeferenced records. The geographic range is from the south of the USA, Mexico, and Caribbean countries at the northern portion of the Neotropics, to its austral distribution in Argentina, Paraguay, Chile, and Uruguay. Regarding anteaters, Myrmecophaga tridactyla has the most records (n=5,941), and Cyclopes sp. has the fewest (n=240). The armadillo species with the most data is Dasypus novemcinctus (n=11,588), and the least recorded for Calyptophractus retusus (n=33). With regards to sloth species, Bradypus variegatus has the most records (n=962), and Bradypus pygmaeus has the fewest (n=12). Our main objective with Neotropical Xenarthrans is to make occurrence and quantitative data available to facilitate more ecological research, particularly if we integrate the xenarthran data with other datasets of Neotropical Series which will become available very soon (i.e. Neotropical Carnivores, Neotropical Invasive Mammals, and Neotropical Hunters and Dogs). Therefore, studies on trophic cascades, hunting pressure, habitat loss, fragmentation effects, species invasion, and climate change effects will be possible with the Neotropical Xenarthrans dataset

Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates

In this work, we have investigated the effect of Bi surfactant on structural, morphological and optical properties of 5 monolayers self-assembled InGaAs quantum dots (QDs) grown on GaAs (001) substrates at various growth temperatures (435, 467 and 495 °C) by Molecular Beam Epitaxy. Two types of InGaAs QDs samples grown with and without exposure to bismuth were studied using Atomic Force Microscopy, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence (PL). Our results have demonstrated that Bi-mediated growth provides improved control of several properties of InGaAs QDs including an enhancement of the QD PL peak intensity by 1.7 times as compared to InGaAs/GaAs control sample grown without Bi. In addition, a red-shift of the PL peak energy of about 40 meV was also observed when the InGaAs QDs were grown by using Bi evidencing that Bi surfactant affects considerably the size of QDs. Furthermore, the QDs grown with Bi surfactant exhibited a higher degree of size uniformity as demonstrated by the observation of narrower Full Width at Half Maximum (FWHM) of the PL peaks. We have also shown that both Bi surfactant and substrate temperature play an important role to control the density of InGaAs QDs. The QD density decreased from 8.9 × 1010 cm−2 (control sample) to 2.0 × 1010 cm−2 for the sample grown at the lowest temperature of 435 °C under Bi flux. All these approaches to control and improve the properties of self-assembled QDs are important for device applications that require high optical efficiency and low QD density

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the literature. However, research in the use of different substrate materials such as silicon to achieve an ideal and full integration of photonic and electronic systems is still a challenge. In this work we have investigated the effect of the substrate material (Si and GaAs) and strain reducing layer on the optical properties of InAs quantum dots for possible applications in laser devices grown by Molecular Beam Epitaxy. Two InAs quantum dots structures with similar active regions grown on GaAs and Si substrates using strain reducing layer consisting of InAs QDs/6 nm In0.15Ga0.85As have been investigated. Atomic Force Microscopy, Transmission Electron Microscopy, and photoluminescence have been used for the characterization of the samples. We have observed a red shift of the InAs QD photoluminescence peak energy for the sample grown on Si substrate as compared to the sample grown on GaAs substrate, which was associated with residual biaxial strain from the Si/GaAs heterointerface. This red-shift of the photoluminescence peak energy is accompanied by a broadening of the photoluminescence spectrum from ∼31 meV to a value of ∼46 meV. This broadening is attributed to the quantum dots size inhomogeneity increase for samples grown on Si substrate. This result open new insights for the controlling the emission of InAs quantum dots for photonic devices integration using Si substrates