Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films

We use point contact Andreev reflection spin spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead acquired simultaneously with the spin polarization measurements, we demonstrate that all the point contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.Comment: 5 Figure

Time sequence and time scale of intermediate mass fragments emission

Semiperipheral collisions in the 124Sn+64Ni reaction at 35MeV/nucleon were studied using the forward part of the Charged Heavy IonMass and Energy ResolvingArray. Nearly completely determined ternary events involving projectilelike fragments (PLF), targetlike fragments (TLF), and intermediatemass fragments (IMF) were selected. A new method of studying the reaction mechanism, focusing on the analysis of the correlations between relative velocities in the IMF+PLF and IMF+TLF subsystems, is proposed. The relative velocity correlations provide information on the time sequence and time scale of the neck fragmentation processes leading to production of IMFs. It is shown that the majority of light IMFs are produced within 40–80 fm/c after the system starts to reseparate. Heavy IMFs are formed at times of about 120 fm/c or later and can be viewed as resulting from two-step (sequential) neck rupture processes