Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs.

We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 10high19 Si- atoms/ccm in the first 40 nm of the GaAs cap layer. The systematic investigation of samples having different cap thickness by Hall effect measurements and local vibrational mode Raman spectroscopy allows us to identify the site distribution of Si atoms in the cap layer and yields insight into the migration mechanism

From circuit design to service delivery - establishing a clinical FES service

There are a number of components that are essential to the operation of a clinical FES service. Firstly we believe that FES is part of a treatment package and cannot be delivered by the simple provision of a stand alone device enabling the patient to treat their own stroke, MS etc. Therefore trained staff are required to deliver that service and in our experience this works best if this is a team of therapists and clinical engineers working closely together. Secondly the equipment has to be designed and manufactured to withstand the rigours of everyday life and reliability is essential. Constant patient support and education are also required and the problems that inevitably arise must be solved promptly. Patient selection is crucial. Finally data must be recorded and stored in a structured way (in Salisbury we have 1104 patients on the database and see 30 patients per week) to quantify the efficacy of treatment and to determine the design criteria for the next generation of devices.<br/

Developing an antimicrobial resistance reference laboratory and surveillance programme in Vietnam

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