87 research outputs found

    Correlated Insulating States in Twisted Double Bilayer Graphene

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    We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles between 1{\deg} and 1.35{\deg}. Consistent with moir\'e band structure calculations, we observe insulators at integer moir\'e band fillings one and three, but not two. An applied transverse electric field separates the first moir\'e conduction band from neighbouring bands, and favors the appearance of correlated insulators at 1/4, 1/2, and 3/4 band filling. Insulating states at 1/4 and 3/4 band filling emerge only in a parallel magnetic field (B_{||}), whereas the resistance at half band filling is weakly dependent on B_{||}. These findings suggest that correlated insulators are favored when a moir\'e flat band is spectrally isolated, with spin polarization at 1/4 and 3/4 band filling and valley polarization at 1/2 band filling.Comment: 5 pages, 4 figures, includes supplementary materia

    Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers

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    We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top (νT\nu_{\mathrm{T}}) and bottom (νB\nu_{\mathrm{B}}) layer filling factors are near νT=±1/2,±3/2\nu_{\mathrm{T}}=\pm1/2, \pm3/2 and νB=±1/2,±3/2\nu_{\mathrm{B}}=\pm1/2, \pm3/2, and the total filling factor ν=±1\nu = \pm1 or ±3\pm3. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling.Comment: 5 pages, 4 figures, includes supplementary materia

    Topological Edge Transport in Twisted Double-Bilayer Graphene

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    Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moir\'e pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact
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