Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light emitting diodes (LED).Comment: 11 page

Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons

We have theoretically and numerically studied nitride-based quantum well (QW) laser structures. More specifically, we have used a QW made with III-nitride where the width of the barrier region is large relative to the electron mean free path, and we have calculated the electron surface capture velocities by considering an electron flux which is captured into the well region. The process is assisted by the emission of the longitudinal optical phonons as predicted by the hybrid (HB) model. The results of surface capture velocities via the emission of HB phonons are compared to the emission of the dielectric continuum phonons (Zakhleniuk et al 1999 Phys. Status Solidi a 176 79). Our investigation shows that the two different phonon models predict almost the same results for the non-retarded limit. Furthermore, the surface capture velocities strongly depend on the size of the structure and the heterostructure materials. Lastly, a comparison to the recent experimental values shows that our model could accurately describe the experimentally measured parameters of the quantum capture processes