Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and \pi segments

Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $\pi$ ($\pi$ junction). When 0 and $\pi$ segments are joined to form a "0-$\pi$ junction", spontaneous supercurrents around the 0-$\pi$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $\pi$, 0-$\pi$, 0-$\pi$-0 and 20 \times 0-$\pi$ junctions, disk-shaped junctions where the 0-$\pi$ boundary forms a ring, and an annular junction with two 0-$\pi$ boundaries. Within each 0 or $\pi$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $\pi$ parts have critical current densities $j_c^\pi$ up to 35\units{A/cm^2} at T = 4.2\units{K}, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0-$\pi$ boundary.Comment: 29 pages, 8 figure

Interference patterns of multifacet 20x(0-pi-) Josephson junctions with ferromagnetic barrier

We have realized multifacet Josephson junctions with periodically alternating critical current density (MJJs) using superconductor-insulator-ferromagnet-superconductor heterostructures. We show that anomalous features of critical current vs. applied magnetic field, observed also for other types of MJJs, are caused by a non-uniform flux density (parallel to the barrier) resulting from screening currents in the electrodes in the presence of a (parasitic) off-plane field component.Comment: submitted to PR

Suppression of dissipation in Nb thin films with triangular antidot arrays by random removal of pinning sites

The depinning current Ic versus applied magnetic field B close to the transition temperature Tc of Nb thin films with randomly diluted triangular arrays of antidots is investigated. % Our experiments confirm essential features in Ic(B) as predicted by Reichhardt and Olson Reichhardt [Phys.Rev. B 76, 094512 (2007)]. % We show that, by introducing disorder into periodic pinning arrays, Ic can be enhanced. % In particular, for arrays with fixed density n_p of antidots, an increase in dilution Pd induces an increase in Ic and decrease of the flux-flow voltage for B>Bp=n_p Phi_0.Comment: 5 pages, 4 figure

Transport, magnetic, and structural properties of La0.7_{0.7}Ce0.3_{0.3}MnO3_3 thin films. Evidence for hole-doping

Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25$Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO$_2$ as a secondary phase could be avoided for $p_{O_2}\ge 8$Pa. However, transmission electron microscopy shows the presence of CeO$_2$ nanoclusters, even in those films which appear to be single phase in XRD. With O$_2$ annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La$_{0.7}$Ce$_{0.3}$MnO$_3$ with mixed Mn$^{3+}$/Mn$^{2+}$ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn$^{3+}$ and Mn$^{4+}$, and only a small amount of Mn$^{2+}$ ions can be observed by XAS. Mn$^{2+}$ and Ce$^{4+}$ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.Comment: 8 pages, 10 figure

Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids

We studied experimentally the effect of a stripe-like domain structure in a ferromagnetic BaFe_{12}O_{19} substrate on the magnetoresistance of a superconducting Pb microbridge. The system was designed in such a way that the bridge is oriented perpendicular to the domain walls. It is demonstrated that depending on the ratio between the amplitude of the nonuniform magnetic field B_0, induced by the ferromagnet, and the upper critical field H_{c2} of the superconducting material, the regions of the reverse-domain superconductivity in the H-T plane can be isolated or can overlap (H is the external magnetic field, T is temperature). The latter case corresponds to the condition B_0/H_{c2}<1 and results in the formation of superconductivity above the magnetic domains of both polarities. We discovered the regime of edge-assisted reverse-domain superconductivity, corresponding to localized superconductivity near the edges of the bridge above the compensated magnetic domains. Direct verification of the formation of inhomogeneous superconducting states and external-field-controlled switching between normal state and inhomogeneous superconductivity were obtained by low-temperature scanning laser microscopy.Comment: 11 pages, 12 figure