New results on heavy hadron spectroscopy with NRQCD

We present results for the spectrum of b-bbar bound states in the quenched approximation for three different values of the lattice spacing. Results for spin-independent splittings are shown to have good scaling behaviour; spin-dependent splittings are more sensitive to discretisation effects. We discuss what needs to be done to match the experimental spectrum.Comment: 3 pages, contribution to Lattice'9

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the room temperature threshold voltage shift, that the electrical activation of donors at an implant density of 2x10^12 cm^-2 is ~100%.Comment: 11 pages, 10 figure

High superconducting anisotropy and weak vortex pinning in Co doped LaFeAsO

Here, we present an electrical transport study in single crystals of LaFe$_{0.92}$Co$_{0.08}$AsO ($T_c \simeq 9.1$ K) under high magnetic fields. In contrast to most of the previously reported Fe based superconductors, and despite its relatively low $T_c$, LaFe$_{1-x}$Co$_x$AsO shows a superconducting anisotropy which is comparable to those seen for instance in the cuprates or $\gamma_H = H_{c2}^{ab}/H_{c2}^{c} = m_c/m_{ab} \simeq 9$, where $m_c/m_{ab}$ is the effective mass anisotropy. Although, in the present case and as in all Fe based superconductors, $\gamma \rightarrow 1$ as $T \rightarrow 0$. Under the application of an external field, we also observe a remarkable broadening of the superconducting transition particularly for fields applied along the inter-planar direction. Both observations indicate that the low dimensionality of LaFe$_{1-x}$Co$_x$AsO is likely to lead to a more complex vortex phase-diagram when compared to the other Fe arsenides and consequently, to a pronounced dissipation associated with the movement of vortices in a possible vortex liquid phase. When compared to, for instance, F-doped compounds pertaining to same family, we obtain rather small activation energies for the motion of vortices. This suggests that the disorder introduced by doping LaFeAsO with F is more effective in pinning the vortices than alloying it with Co.Comment: 7 figures, 7 pages, Phys. Rev. B (in press

Magnetic and thermal properties of the S = 1/2 zig-zag spin-chain compound In2VO5

Static magnetic susceptibility \chi, ac susceptibility \chi_{ac} and specific heat C versus temperature T measurements on polycrystalline samples of In2VO5 and \chi and C versus T measurements on the isostructural, nonmagnetic compound In2TiO5 are reported. A Curie-Wiess fit to the \chi(T) data above 175 K for In2VO5 indicates ferromagnetic exchange between V^{4+} (S = 1/2) moments. Below 150 K the \chi(T) data deviate from the Curie-Weiss behavior but there is no signature of any long range magnetic order down to 1.8 K. There is a cusp at 2.8 K in the zero field cooled (ZFC) \chi(T) data measured in a magnetic field of 100 Oe and the ZFC and field cooled (FC) data show a bifurcation below this temperature. The frequency dependence of the \chi_{ac}(T) data indicate that below 3 K the system is in a spin-glass state. The difference \Delta C between the heat capacity of In2VO5 and In2TiO5 shows a broad anomaly peaked at 130 K. The entropy upto 300 K is more than what is expected for S = 1/2 moments. The anomaly in \Delta C and the extra entropy suggests that there may be a structural change below 130 K in In2VO5.Comment: 6 pages, 7 figures, 1 tabl

Optical addressing of an individual erbium ion in silicon

The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies.Comment: Corrected the third affiliation. Corrected one cross-reference of "Fig. 3b" to "Fig. 3c". Corrected the caption of Fig. 3a by changing (+-)1 to

Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.Comment: 9 pages, 3 figure

Low-Temperature Rapid Synthesis and Superconductivity of Fe-Based Oxypnictide Superconductors

we were able to develop a novel method to synthesize Fe-based oxypnictide superconductors. By using LnAs and FeO as the starting materials and a ball-milling process prior to solid-state sintering, Tc as high as 50.7 K was obtained with the sample of Sm 0.85Nd0.15FeAsO0.85F0.15 prepared by sintering at temperatures as low as 1173 K for times as short as 20 min.Comment: 2 pages,2 figures, 1 tabl