Terahertz Hall Measurements On Optimally Doped Single Crystal Bi-2212

The infrared Hall angle in optimally doped single crystal $\rm Bi_2 Sr_2 Ca Cu_2 O_{8+x}$ was measured from 3.05 to 21.75 meV as a continuous function of temperature from 25 to 300\,K. In the normal state, the temperature dependence of the real part of the cotangent of the infrared Hall angle obeys the same power law as dc measurements. The measured Hall frequency $\rm \omega_H$ is significantly larger than the expected value based upon ARPES data analyzed in terms of the relaxation time approximation. This discrepancy as well as the temperature dependence of $\rm Re(\cot{\theta_H})$ and $\omega_H$ is well described by a Fermi liquid theory in which current vertex corrections produced by electron-magnon scattering are included.Comment: 10 pages, 2 figure

Study of contamination sensors. Volume I - Executive summary report

Design criteria for automatic remotely indicating fluid contamination sensors, monitors, counters, and recorders and for sampling equipment and technique

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.Comment: 10 pages, 5 figure

Temperature dependent optical studies of Ti1−x_{1-x}Cox_xO2_2

We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characterized by a broad emission from self-trapped excitons (STE) at 2.3 eV at temperatures below 120 K. This peak is characteristic of the anatase-phase TiO$_2$ and shows a small blueshift with increasing doping concentration. In addition to the emission from STE, the Co-doped samples show two emission lines at 2.77 eV and 2.94 eV that are absent in the undoped film indicative of a spin-flip energy.Comment: 8 pages, 4 figure