Weak localization in a system with a barrier: Dephasing and weak Coulomb blockade

We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing which persists down to T=0 and yields suppression of WL correction to conductance below its non-interacting value. Our results may account for recent observations of low temperature saturation of the electron decoherence time in quantum dots.Comment: published version, 10 page

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Persistent current noise

We demonstrate that persistent current in meso- and nanorings may fluctuate down to zero temperature provided the current operator does not commute with the total Hamiltonian of the system. For a model of a quantum particle on a ring we explicitly evaluate PC noise power which has a form of sharp peaks which become broadened for multi-channel rings or in the presence of dissipation. PC noise can be tuned by an external magnetic flux which is a fundamental manifestation of quantum coherence in the system.Comment: 4 pages, 1 figur

Coulomb blockade of non-local electron transport in metallic conductors

We consider a metallic wire coupled to two metallic electrodes via two junctions placed nearby. A bias voltage applied to one of such junctions alters the electron distribution function in the wire in the vicinity of another junction thus modifying both its noise and the Coulomb blockade correction to its conductance. We evaluate such interaction corrections to both local and non-local conductances demonstrating non-trivial Coulomb anomalies in the system under consideration. Experiments on non-local electron transport with Coulomb effects can be conveniently used to test inelastic electron relaxation in metallic conductors at low temperatures.Comment: Published version. 11 pages, 4 figures. New references added, discussion and introduction are extended, appendices adde

Evidence for magnetoplasmon character of the cyclotron resonance response of a two-dimensional electron gas

Experimental results on the absolute magneto-transmission of a series of high density, high mobility GaAs quantum wells are compared with the predictions of a recent magnetoplasmon theory for values of the filling factor above 2. We show that the magnetoplasmon picture can explain the non-linear features observed in the magnetic field evolution of the cyclotron resonance energies and of the absorption oscillator strength. This provides experimental evidence that inter Landau level excitations probed by infrared spectroscopy need to be considered as many body excitations in terms of magnetoplasmons: this is especially true when interpreting the oscillator strengths of the cyclotron transitions

Electron transport through interacting quantum dots

We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende

Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo techniques and the conductance is determined from the Kubo formula. A regularized singular value decomposition scheme is employed to calculate the conductance from imaginary time simulation data. Our findings are shown to bridge between available analytical results in the semiclassical and perturbative limits and are found to explain recent experimental results in a regime not accessible by earlier methods.Comment: 4 pages, 2 figure

Penalized maximum likelihood and semiparametric second-order efficiency

We consider the problem of estimation of a shift parameter of an unknown symmetric function in Gaussian white noise. We introduce a notion of semiparametric second-order efficiency and propose estimators that are semiparametrically efficient and second-order efficient in our model. These estimators are of a penalized maximum likelihood type with an appropriately chosen penalty. We argue that second-order efficiency is crucial in semiparametric problems since only the second-order terms in asymptotic expansion for the risk account for the behavior of the ``nonparametric component'' of a semiparametric procedure, and they are not dramatically smaller than the first-order terms.Comment: Published at http://dx.doi.org/10.1214/009053605000000895 in the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org