790 research outputs found
Comment on "On the negative value of dielectric permittivity of the water surface layer" [Appl. Phys. Lett. 83, 4506 (2003)]
The recent interpretation of the positive resonance frequency shift in
dielectric resonators loaded by water is reviewed. Instead of the invoked
negative dielectric constant of water surface layer, it is demonstrated that
the experimental results are fully reproduced by taking into account the
dielectric losses of the sample.Comment: PDF Acrobat 4.0 file, 2 pages, 2 figures, submitted to Appl. Phys.
Let
A Computer Simulation Model of Waterhyacinth and Weevil Interactions
A personal computer simulation model termed INSECT has been developed to evaluate biological control of waterhyacinth (Eichhornia crassipes (Mart.) Solms.) by two species of weevil (Neochetina eichhorniae Warner, and N. bruchi Hustache). The model results were compared with the data from three different locations. For each data set, the simulated plant biomass, adult and larva populations were plotted aqainst the 95% confidence intervals of the actual field observations. In many cases, the simulation results were within the 95% confidence intervals, and especially during the growing season, they indicated trends similar to those seen in the field data. However, there were discrepancies in both the magnitude and the trend for early and the late periods of the year. These initial results suggest that development of a model to simulate the impact of a biocontrol agent on waterhyacinth populations is a feasible approach to better understand the interactions within this control system
Binary continuous random networks
Many properties of disordered materials can be understood by looking at
idealized structural models, in which the strain is as small as is possible in
the absence of long-range order. For covalent amorphous semiconductors and
glasses, such an idealized structural model, the continuous-random network, was
introduced 70 years ago by Zachariasen. In this model, each atom is placed in a
crystal-like local environment, with perfect coordination and chemical
ordering, yet longer-range order is nonexistent. Defects, such as missing or
added bonds, or chemical mismatches, however, are not accounted for. In this
paper we explore under which conditions the idealized CRN model without defects
captures the properties of the material, and under which conditions defects are
an inherent part of the idealized model. We find that the density of defects in
tetrahedral networks does not vary smoothly with variations in the interaction
strengths, but jumps from close-to-zero to a finite density. Consequently, in
certain materials, defects do not play a role except for being thermodynamical
excitations, whereas in others they are a fundamental ingredient of the ideal
structure.Comment: Article in honor of Mike Thorpe's 60th birthday (to appear in J.
Phys: Cond Matt.
Dynamics of Bulk vs. Nanoscale WS_2: Local Strain and Charging Effects
We measured the infrared vibrational properties of bulk and nanoparticle
WS in order to investigate the structure-property relations in these novel
materials. In addition to the symmetry-breaking effects of local strain,
nanoparticle curvature modifies the local charging environment of the bulk
material. Performing a charge analysis on the \emph{xy}-polarized E
vibrational mode, we find an approximate 1.5:1 intralayer charge difference
between the layered 2H material and inorganic fullerene-like (IF)
nanoparticles. This effective charge difference may impact the solid-state
lubrication properties of nanoscale metal dichalcogenides.Comment: 6 pages, 5 figure
Topology of amorphous tetrahedral semiconductors on intermediate lengthscales
Using the recently-proposed ``activation-relaxation technique'' for
optimizing complex structures, we develop a structural model appropriate to
a-GaAs which is almost free of odd-membered rings, i.e., wrong bonds, and
possesses an almost perfect coordination of four. The model is found to be
superior to structures obtained from much more computer-intensive tight-binding
or quantum molecular-dynamics simulations. For the elemental system a-Si, where
wrong bonds do not exist, the cost in elastic energy for removing odd-membered
rings is such that the traditional continuous-random network is appropriate.
Our study thus provides, for the first time, direct information on the nature
of intermediate-range topology in amorphous tetrahedral semiconductors.Comment: 4 pages, Latex and 2 postscript figure
Efficient tight-binding Monte Carlo structural sampling of complex materials
While recent work towards the development of tight-binding and ab-initio
algorithms has focused on molecular dynamics, Monte Carlo methods can often
lead to better results with relatively little effort. We present here a
multi-step Monte Carlo algorithm that makes use of the possibility of quickly
evaluating local energies. For the thermalization of a 1000-atom configuration
of {\it a}-Si, this algorithm gains about an order of magnitude in speed over
standard molecular dynamics. The algorithm can easily be ported to a wide range
of materials and can be dynamically optimized for a maximum efficiency.Comment: 5 pages including 3 postscript figure
Model-Independent Sum Rule Analysis Based on Limited-Range Spectral Data
Partial sum rules are widely used in physics to separate low- and high-energy
degrees of freedom of complex dynamical systems. Their application, though, is
challenged in practice by the always finite spectrometer bandwidth and is often
performed using risky model-dependent extrapolations. We show that, given
spectra of the real and imaginary parts of any causal frequency-dependent
response function (for example, optical conductivity, magnetic susceptibility,
acoustical impedance etc.) in a limited range, the sum-rule integral from zero
to a certain cutoff frequency inside this range can be safely derived using
only the Kramers-Kronig dispersion relations without any extra model
assumptions. This implies that experimental techniques providing both active
and reactive response components independently, such as spectroscopic
ellipsometry in optics, allow an extrapolation-independent determination of
spectral weight 'hidden' below the lowest accessible frequency.Comment: 5 pages, 3 figure
Temperature dependence of the excitation spectrum in the charge-density-wave ErTe and HoTe systems
We provide optical reflectivity data collected over a broad spectral range
and as a function of temperature on the ErTe and HoTe materials, which
undergo two consecutive charge-density-wave (CDW) phase transitions at
= 265 and 288 K and at = 157 and 110 K, respectively. We
observe the temperature dependence of both the Drude component, due to the
itinerant charge carriers, and the single-particle peak, ascribed to the
charge-density-wave gap excitation. The CDW gap progressively opens while the
metallic component gets narrow with decreasing temperature. An important
fraction of the whole Fermi surface seems to be affected by the CDW phase
transitions. It turns out that the temperature and the previously investigated
pressure dependence of the most relevant CDW parameters share several common
features and behaviors. Particularly, the order parameter of the CDW state is
in general agreement with the predictions of the BCS theory
Optical properties of the Ce and La di-telluride charge density wave compounds
The La and Ce di-tellurides LaTe and CeTe are deep in the
charge-density-wave (CDW) ground state even at 300 K. We have collected their
electrodynamic response over a broad spectral range from the far infrared up to
the ultraviolet. We establish the energy scale of the single particle
excitation across the CDW gap. Moreover, we find that the CDW collective state
gaps a very large portion of the Fermi surface. Similarly to the related rare
earth tri-tellurides, we envisage that interactions and Umklapp processes play
a role in the onset of the CDW broken symmetry ground state
Optical evidence for a spin-filter effect in the charge transport of
We have measured the optical reflectivity of
as a function of temperature between 1.5 and 300
and in external magnetic fields up to 7 . The slope at the onset of the
plasma edge feature in increases with decreasing temperature and
increasing field but the plasma edge itself does not exhibit the remarkable
blue shift that is observed in the binary compound . The analysis of
the magnetic field dependence of the low temperature optical conductivity
spectrum confirms the previously observed exponential decrease of the
electrical resistivity upon increasing, field-induced bulk magnetization at
constant temperature. In addition, the individual exponential magnetization
dependences of the plasma frequency and scattering rate are extracted from the
optical data.Comment: submitted to Phys. Rev. Let
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