Carrier lifetime measurements and recombination characteristics in silicon and studies phenomena associated with radiation induced defect levels

Carrier lifetime measurements and recombination characteristics in silicon and radiation induced defect level

<irradiation damage in n-type silicon crystals< monthly progress report, 1 feb. - 1 mar. 1965

Defect introduction in n-silicon crystal by irradiation with high energy electro

Results of the 1983 NASA/JPL balloon flight solar cell calibration program

The 1983 solar cell calibration balloon flight was successfully completed and met all objectives of the program. Thirty-four modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays. Cell calibration data are tabulated as well as the repeatability of standard solar cell BFS-17A (35 flights over a 21-year period)

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells

Characterization of solar cells for space applications. Volume 4: Electrical characteristics of Spectrolab BSF 200-micron Helios cells as a function of intensity and temperature

Electrical characteristics of Spectrolab BSF 200 micron Helios N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature

Effects of low energy protons and high energy electrons on silicon

Low energy proton and high energy electron radiation effects on silicon solar cell

Results of the 1984 NASA/JPL balloon flight solar cell calibration program

The 1984 solar cell calibration balloon flight was successfully completed on July 19, meeting all objectives of the program. Thirty-six modules were carried to an altitude of 36.0 kilometers. The calibrated cells can now be used as reference standards in simulator testing of cells and arrays

Characterization of solar cells for space applications. Volume 3: Electrical characteristics of OCLI hybrid MLAR solar cells as a function of intensity and temperature

Electrical characteristics of hybrid multilayer antireflectance coated silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature

Study and determination of an optimum design for space utilized lithium-doped solar cells, part 2

Lithium doped solar cell hardness to 1 MeV electron irradiatio