Mutual funds as a form of collective investment in Russia

The relevance of the research problem inspired with the fact nowadays there is a need for theoretical generalization based on international experience the essence of the collective investment system and the rationale for prioritizing the mutual funds development as the most attractive form of collective investment. The goal of the article lies in theoretical provisions development and practical recommendations for mutual Funds modernization and development as a form of collective investment. A leading approach to study this problem is a classical approach that can identify the characteristics of different forms in collective investment, mutual Funds benefits as a promising form of collective investments organization. Main results of the research are to formulate definitions of collective investment, collective investment that allows you to build a model of the collective investments system in Russia, reflecting the relationship and interdependence of an elements set and having relative isolation from other segments of the financial market. Also there were developed priorities for the mutual funds development as a promising form of collective investment in the Russian Federation. The article can be useful, that developed in that position develop theory for collective investment in management system private savings (personal finance). Suggested ways of improving the mutual funds functioning can be used in the practice of collective investments for providing safety of investors’ financial resources, increase control and mitigate risk. © 2016 Tershukova et al

Magnetodielectric effect and optic soft mode behaviour in quantum paraelectric EuTiO3 ceramics

Infrared reflectivity and time-domain terahertz transmission spectra of EuTiO3 ceramics revealed a polar optic phonon at 6 - 300K, whose softening is fully responsible for the recently observed quantum paraelectric behaviour. Even if our EuTiO3 ceramics show lower permittivity than the single crystal due to a reduced density and/or small amount of secondary pyrochlore Eu2Ti2O7 phase, we confirmed the magnetic field dependence of the permittivity, also slightly smaller than in single crystal. Attempt to reveal the soft phonon dependence at 1.8K on the magnetic field up to 13T remained below the accuracy of our infrared reflectivity experiment

Tunka-Rex: the Cost-Effective Radio Extension of the Tunka Air-Shower Observatory

Tunka-Rex is the radio extension of the Tunka cosmic-ray observatory in Siberia close to Lake Baikal. Since October 2012 Tunka-Rex measures the radio signal of air-showers in coincidence with the non-imaging air-Cherenkov array Tunka-133. Furthermore, this year additional antennas will go into operation triggered by the new scintillator array Tunka-Grande measuring the secondary electrons and muons of air showers. Tunka-Rex is a demonstrator for how economic an antenna array can be without losing significant performance: we have decided for simple and robust SALLA antennas, and we share the existing DAQ running in slave mode with the PMT detectors and the scintillators, respectively. This means that Tunka-Rex is triggered externally, and does not need its own infrastructure and DAQ for hybrid measurements. By this, the performance and the added value of the supplementary radio measurements can be studied, in particular, the precision for the reconstructed energy and the shower maximum in the energy range of approximately $10^{17}-10^{18}\,$eV. Here we show first results on the energy reconstruction indicating that radio measurements can compete with air-Cherenkov measurements in precision. Moreover, we discuss future plans for Tunka-Rex.Comment: Proceeding of UHECR 2014, Springdale, Utah, USA, accepted by JPS Conference Proceeding

Measurement of J/ψ→γηcJ/\psi\to\gamma\eta_{\rm c} decay rate and ηc\eta_{\rm c} parameters at KEDR

Using the inclusive photon spectrum based on a data sample collected at the $J/\psi$ peak with the KEDR detector at the VEPP-4M $e^+e^-$ collider, we measured the rate of the radiative decay $J/\psi\to\gamma\eta_{\rm c}$ as well as $\eta_{\rm c}$ mass and width. Taking into account an asymmetric photon lineshape we obtained $\Gamma^0_{\gamma\eta_{\rm c}}=2.98\pm0.18 \phantom{|}^{+0.15}_{-0.33}$ keV, $M_{\eta_{\rm c}} = 2983.5 \pm 1.4 \phantom{|}^{+1.6}_{-3.6}$ MeV/$c^2$, $\Gamma_{\eta_{\rm c}} = 27.2 \pm 3.1 \phantom{|}^{+5.4}_{-2.6}$ MeV.Comment: 6 pages, 3 figure

Precise measurement of RudsR_{\text{uds}} and RR between 1.84 and 3.72 GeV at the KEDR detector

The present work continues a series of the KEDR measurements of the $R$ value that started in 2010 at the VEPP-4M $e^+e^-$ collider. By combining new data with our previous results in this energy range we measured the values of $R_{\text{uds}}$ and $R$ at nine center-of-mass energies between 3.08 and 3.72 GeV. The total accuracy is about or better than $2.6\%$ at most of energy points with a systematic uncertainty of about $1.9\%$. Together with the previous precise $R$ measurement at KEDR in the energy range 1.84-3.05 GeV, it constitutes the most detailed high-precision $R$ measurement near the charmonium production threshold.Comment: arXiv admin note: text overlap with arXiv:1610.02827 and substantial text overlap with arXiv:1510.0266

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR