FORMATION OF LUMINESCENT NANOSTRUCTURES BY REDUCTION OF SiO2 IN TRACKS OF SWIFT HEAVY IONS

320 nm-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions or with 700 MeV Bi to the doses ranging between 1012 cm-2 and 1014 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion doses. In parallel, optical absorption, Raman scattering and X-ray photoelectron spectroscopy were carred out. The results obtained are interpreted as the formation of the light-emitting nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the doses of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ~10 nm, respectively. Shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory

Recent progress in photonic processing of metal‐oxide transistors

Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional high temperature thermal annealing offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. A review of recent advances in photonic processing paradigms of metal oxide thin film transistors (TFTs), is presented with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or post-deposition treatment of metal oxides and their application in thin-film electronics. The pros and cons of the different technologies are discussed in light of recent developments and prospective research in the field of modern large-area electronics is highlighted

FORMATION OF LUMINESCENT NANOSTRUCTURES BY REDUCTION OF SiO2 IN TRACKS OF SWIFT HEAVY IONS

320 nm-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions or with 700 MeV Bi to the doses ranging between 1012 cm-2 and 1014 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion doses. In parallel, optical absorption, Raman scattering and X-ray photoelectron spectroscopy were carred out. The results obtained are interpreted as the formation of the light-emitting nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the doses of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ~10 nm, respectively. Shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory