Opto-Electronic Characterization of Three Dimensional Topological Insulators

We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.Comment: 6 pages, 4 figure

Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors

The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in AlxGa1-xAs:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures

We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin.Comment: 6 pages, 3 figure

Spin currents in diluted magnetic semiconductors (extended version)

Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting.Comment: 6 pages, 4 figure

Magneto-gyrotropic effects in semiconductor quantum wells (review)

Magneto-gyrotropic photogalvanic effects in quantum wells are reviewed. We discuss experimental data, results of phenomenological analysis and microscopic models of these effects. The current flow is driven by spin-dependent scattering in low-dimensional structures gyrotropic media resulted in asymmetry of photoexcitation and relaxation processes. Several applications of the effects are also considered.Comment: 28 pages, 13 figure

Orbital mechanism of the circular photogalvanic effect in quantum wells

It is shown that the free-carrier (Drude) absorption of circularly polarized radiation in quantum well structures leads to an electric current flow. The photocurrent reverses its direction upon switching the light helicity. A pure orbital mechanism of such a circular photogalvanic effect is proposed that is based on interference of different pathways contributing to the light absorption. Calculation shows that the magnitude of the helicity dependent photocurrent in $n$-doped quantum well structures corresponds to recent experimental observations.Comment: 5 pages, 2 figures, to be published in JETP Letter

Current-induced Spin Polarization in Two-Dimensional Hole Gas

We investigate the current-induced spin polarization in the two-dimensional hole gas (2DHG) with the structure inversion asymmetry. By using the perturbation theory, we re-derive the effective $k$-cubic Rashba Hamiltonian for 2DHG and the generalized spin operators accordingly. Then based on the linear response theory we calculate the current-induced spin polarization both analytically and numerically with the disorder effect considered. We have found that, quite different from the two-dimensional electron gas, the spin polarization in 2DHG depends linearly on Fermi energy in the low doping regime, and with increasing Fermi energy, the spin polarization may be suppressed and even changes its sign. We predict a pronounced peak of the spin polarization in 2DHG once the Fermi level is somewhere between minimum points of two spin-split branches of the lowest light-hole subband. We discuss the possibility of measurements in experiments as regards the temperature and the width of quantum wells.Comment: 13 pages, 8 figures, submitted to PR

All-electric detectors of the polarization state of terahertz laser radiation (extended version)

Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible

Electron and Hole Spin Splitting and Photogalvanic Effect in Quantum Wells

A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. It is shown that the photocurrent value and direction depend strongly on the form of the spin-orbit interaction. The currents induced by structure-, bulk-, and interface-inversion asymmetry are investigated. The photocurrent excitation spectra caused by spin splittings in both conduction and valence bands are calculated.Comment: 7 pages, 3 figure