Oscillating Fracture in Rubber

We have found an oscillating instability of fast-running cracks in thin rubber sheets. A well-defined transition from straight to oscillating cracks occurs as the amount of biaxial strain increases. Measurements of the amplitude and wavelength of the oscillation near the onset of this instability indicate that the instability is a Hopf bifurcation

Raman backscattering saturation due to coupling between ωp and 2ωp modes in plasma

Raman backscattering (RBS) in plasma is the basis of plasma-based amplifiers and is important in laser-driven fusion experiments. We show that saturation can arise from nonlinearities due to coupling between the fundamental and harmonic plasma wave modes for sufficiently intense pump and seed pulses. We present a time-dependent analysis that shows that plasma wave phase shifts reach a maximum close to wavebreaking. The study contributes to a new understanding of RBS saturation for counter-propagating laser pulses

Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots

Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QDs, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QDs are discussed in detail based on these calculations. The calculations are compared with the available experimental observation. We are expecting that our calculations can further stimulate more experimental measurements.Comment: 21 pages, 7 figure

Raman backscattering saturation due to coupling between ??p and 2??p modes in plasma

Raman backscattering (RBS) in plasma is the basis of plasma-based amplifiers and is important in laser-driven fusion experiments. We show that saturation can arise from nonlinearities due to coupling between the fundamental and harmonic plasma wave modes for sufficiently intense pump and seed pulses. We present a time-dependent analysis that shows that plasma wave phase shifts reach a maximum close to wave breaking. The study contributes to a new understanding of RBS saturation for counter-propagating laser pulses.open0

Steady-State Cracks in Viscoelastic Lattice Models

We study the steady-state motion of mode III cracks propagating on a lattice exhibiting viscoelastic dynamics. The introduction of a Kelvin viscosity $\eta$ allows for a direct comparison between lattice results and continuum treatments. Utilizing both numerical and analytical (Wiener-Hopf) techniques, we explore this comparison as a function of the driving displacement $\Delta$ and the number of transverse sites $N$. At any $N$, the continuum theory misses the lattice-trapping phenomenon; this is well-known, but the introduction of $\eta$ introduces some new twists. More importantly, for large $N$ even at large $\Delta$, the standard two-dimensional elastodynamics approach completely misses the $\eta$-dependent velocity selection, as this selection disappears completely in the leading order naive continuum limit of the lattice problem.Comment: 27 pages, 8 figure

An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes

We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths.Comment: 9 pages, 3 figures, pdf file available at http://sscu.iisc.ernet.in/~sampan/publications.htm

Particle-in-cell simulation of plasma-based amplification using a moving window

Current high-power laser amplifiers use chirped-pulse amplification to prevent damage to their solid-state components caused by intense electromagnetic fields. To increase laser power further requires ever larger and more expensive devices. The Raman backscatter instability in plasma facilitates an alternative amplification strategy without the limitations imposed by material damage thresholds. Plasma-based amplification has been experimentally demonstrated, but only with relatively low efficiency. Further progress requires extensive use of numerical simulations, which usually need significant computational resources. Here we present particle-in-cell (PIC) simulation techniques for accurately simulating Raman amplification using a moving window with suitable boundary conditions, reducing computational cost. We show that an analytical model for matched pump propagation in a parabolic plasma channel slightly overestimates amplification as pump laser intensity is increased. However, a method for loading data saved from separate pump-only simulations demonstrates excellent agreement with full PIC simulation. The reduction in required resources will enable parameter scans to be performed to optimize amplification, and stimulate efforts toward developing viable plasma-based laser amplifiers. The methods may also be extended to investigate Brillouin scattering, and for the development of laser wakefield accelerators. Efficient, compact, low-cost amplifiers would have widespread applications in academia and industry

Excitons in type-II quantum dots: Finite offsets

Quantum size effects for an exciton attached to a spherical quantum dot are calculated by a variational approach. The band line-ups are assumed to be type-II with finite offsets. The dependence of the exciton binding energy upon the dot radius and the offsets is studied for different sets of electron and hole effective masses

Monte-Carlo simulations of the recombination dynamics in porous silicon

A simple lattice model describing the recombination dynamics in visible light emitting porous Silicon is presented. In the model, each occupied lattice site represents a Si crystal of nanometer size. The disordered structure of porous Silicon is modeled by modified random percolation networks in two and three dimensions. Both correlated (excitons) and uncorrelated electron-hole pairs have been studied. Radiative and non-radiative processes as well as hopping between nearest neighbor occupied sites are taken into account. By means of extensive Monte-Carlo simulations, we show that the recombination dynamics in porous Silicon is due to a dispersive diffusion of excitons in a disordered arrangement of interconnected Si quantum dots. The simulated luminescence decay for the excitons shows a stretched exponential lineshape while for uncorrelated electron-hole pairs a power law decay is suggested. Our results successfully account for the recombination dynamics recently observed in the experiments. The present model is a prototype for a larger class of models describing diffusion of particles in a complex disordered system.Comment: 33 pages, RevTeX, 19 figures available on request to [email protected]

Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures

The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelope-function theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs; (3) the changes of the acceptor binding energies are very complex as the quantum confinement size increases; (4) the binding energies monotonically decrease as the acceptor moves away from the nano-structures’ center; (5) as the symmetry decreases, the degeneracy is lifted, and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices