Silicon amendment induces synergistic plant defense mechanism against pink stem borer (Sesamia inferens Walker.) in finger millet (Eleusine coracana Gaertn.).

Silicon (Si) uptake and accumulation in plants can mitigate various biotic stresses through enhanced plant resistance against wide range of herbivores. But the role of silicon in defense molecular mechanism still remains to be elucidated in finger millet. In the present study, we identified three silicon transporter genes viz. EcLsi1, EcLsi2, and EcLsi6 involved in silicon uptake mechanism. In addition, the study also identified and characterized ten different Si transporters genes from finger millet through transcriptome assembly. The phylogenetic study revealed that EcLsi1 and EcLsi6 are homologs while EcLsi2 and EcLsi3 form another pair of homologs. EcLsi1 and EcLsi6 belong to family of NIP2s (Nod26-like major intrinsic protein), bona fide silicon transporters, whereas EcLsi2 and EcLsi3, an efflux Si transporter, belong to an uncharacterized anion transporter family having a significant identity with putative arsB transporter proteins. Further, the phylogenetic and topology analysis suggest that EcLsi1 and EcLsi2 co-evolved during evolution while, EcLsi2 and EcLsi3 are evolved from either EcLsi1 and/or EcLsi6 by fusion or duplication event. Moreover, these silicon transporters are predicted to be localized in plasma membrane, but their structural differences indicate that they might have differences in their silicon uptake ability. Silicon amendment induces the synergistic defense mechanism by significantly increasing the transcript level of silicon transporter genes (EcLsi1, EcLsi2 and EcLsi6) as well as defense hormone regulating genes (EcSAM, EcPAL and EcLOX) at 72 hpi (hours of post infestation) in both stem and roots compared to non-silicon treated plants against pink stem borer in finger millet plants. This study will help to understand the molecular defense mechanism for developing strategies for insect pest management

Methodologies of Application of Sol-Gel Based Solution onto Substrate: A Review

Just as the diverse as the various substrates that can be coated is the choice of several coating methods by which the coating can be applied to these pretreated surfaces. They include the manual methods, where great skills and experience is needed, on the other hand there are automated and robotics coating control methods where coating can be applied with more precise manner. Sol-gel process is one of the promising bottom up nano-coating technologies to develop thin film over various metallic substrates. The property and characteristic of the resulting film is strongly influenced by the various parameters and reaction conditions of the sol-gel process and of course on the deposition techniques. In this review, we have thrown some lights on different coating application processes covering theoretical principle, advantages, disadvantages, and special various parameters controlling the final film quality